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IRFH5110TR2PBF-VB Product details

Product introduction:

IRFH5110TR2PBF-VB MOSFET Product Introduction:
**IRFH5110TR2PBF-VB** is a single N-channel MOSFET in **DFN8 (5x6)** package, with a drain-source voltage (**VDS**) of 100V and a maximum drain current (**ID**) of 65A. It is designed based on **Trench** technology and has the characteristics of low on-resistance and high efficiency. This MOSFET can maintain a low on-resistance when the gate drive voltage is 10V and 4.5V, and is suitable for a variety of power management and conversion applications, especially in high-efficiency, high-current demand scenarios.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(5X6) Single-N 100V 2.5V 65A 9mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(5X6) Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(5X6) Single-N 100V 2.5V 65A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(5X6) Single-N 100V 2.5V 65A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(5X6) Single-N
Detailed parameter description:
- **Package**: DFN8 (5x6)
This small package not only achieves high power density, but also provides good thermal management, suitable for compact circuit design.

- **Configuration**: Single N-channel
The single N-channel configuration of this MOSFET enables efficient current control in current switching applications.

- **Drain-source voltage (VDS)**: 100V
Supports drain-source voltages up to 100V, suitable for handling medium voltage range loads and power conversion applications.

- **Gate-source voltage (VGS)**: ±20V
The gate-source voltage range is ±20V, which can adapt to different drive voltages to ensure switching reliability and flexibility.

- **Threshold voltage (Vth)**: 2.5V
The relatively low threshold voltage means that the MOSFET can be turned on at a lower gate voltage, reducing the power consumption of the drive circuit.

- **On-state resistance (RDS(ON))**:
- **12.36mΩ @ VGS = 4.5V**
- **9mΩ @ VGS = 10V**
Low on-resistance enables the MOSFET to maintain an efficient on-state at low gate drive, reducing power loss and improving system efficiency.

- **Drainage current (ID)**: 65A
Maximum continuous leakage current of 65A can be withstood, suitable for high current density applications.

- **Technology**: Trench
Using **Trench** technology, it can provide lower on-resistance and better switching performance, especially suitable for high-frequency and high-efficiency application scenarios.

Domain and module applications:

Application areas and module examples:
1. **Power Management Systems**:
**IRFH5110TR2PBF-VB** is suitable for power management systems such as switching power supplies (SMPS) and DC-DC converters. Its 100V voltage handling capability and low on-resistance enable it to effectively reduce power consumption during power conversion, and is suitable for server power supplies, communication equipment power supplies, and battery management modules for portable devices.

2. **Motor control and drive systems**:
This MOSFET has excellent performance in high current applications and is very suitable for motor drive systems, especially those that require fast switching and low conduction losses. It can provide efficient energy conversion and drive control in motor control in electric vehicles, industrial automation equipment, and household appliances.

3. **Photovoltaic Inverters**:
Due to its higher drain-source voltage and low on-state resistance, **IRFH5110TR2PBF-VB** can be used in solar inverters. It can ensure efficient conversion of the system under high current conditions and improve the efficiency of the entire system by reducing heat loss.

4. **Load Switching and Power Distribution**:
In load switching and power distribution systems, this MOSFET can provide reliable load control in applications requiring high current and medium voltage, especially in high-power demand scenarios such as servers and data centers, ensuring efficient power distribution and load management.

**IRFH5110TR2PBF-VB** is an excellent performance MOSFET. With its low loss and high efficiency, it is widely used in power conversion, load management, motor drive and new energy systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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