Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(5X6) |
Single-N |
150V |
|
3V |
53.7A |
|
|
15.8mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| DFN8(5X6) |
Single-N |
150V |
|
3V |
53.7A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| DFN8(5X6) |
Single-N |
150V |
|
3V |
53.7A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description
1. **Package**: DFN8 (5x6)
The DFN8 package has excellent heat dissipation performance and a small footprint, which is very suitable for high-density circuit design.
2. **Configuration**: Single N-channel
N-channel configuration is commonly used in switching applications, with faster switching speeds and higher current carrying capabilities.
3. **Drain-source voltage (VDS)**: 150V
The maximum drain-source voltage of this device is 150V, which is suitable for medium and high voltage applications such as power converters, drive circuits, etc.
4. **Gate-source voltage (VGS)**: ±20V
The **±20V** gate-source voltage range provides good control flexibility and is suitable for a variety of drive and control circuits.
5. **Threshold Voltage (Vth)**: 3V
The threshold voltage is 3V, which means that the MOSFET can be reliably switched even at low voltages, making it suitable for low-voltage logic circuit driving.
6. **RDS(ON)**: 15.8mΩ @ VGS=10V
The lower on-resistance value helps reduce conduction losses and improves the efficiency of the entire circuit.
7. **Maximum Drain Current (ID)**: 53.7A
Supports a maximum drain current of **53.7A**, making it suitable for high-power applications such as power management and motor drives.
8. **Technology**: Trench
Trench technology optimizes the device’s current handling capability and reduces on-resistance, helping to improve switching speed and power efficiency.
Domain and module applications：
Applications and module examples
1. **Power Converters**
IRFH5015TRPBF-VB excels in high-voltage **DC-DC power converters**, especially in power management modules used in servers, data centers, and telecommunications equipment. It can effectively handle high voltages and provide low-loss power conversion.
2. **Motor Drivers**
In medium and high voltage motor drivers, this MOSFET can withstand large load currents and provide fast switching characteristics, suitable for applications such as industrial motor control, robots, and power tools.
3. **Solar Inverters**
IRFH5015TRPBF-VB is suitable for power switch modules in **solar inverters**. These applications require high voltage and high current capabilities, and the MOSFET's 150V drain-source voltage and 53.7A current support can ensure efficient power conversion and improve system energy efficiency.
4. **Uninterruptible Power Supply (UPS) System**
In **UPS system**, IRFH5015TRPBF-VB can be used as a key component for battery management and power conversion, ensuring fast switching of power and providing stable voltage output, suitable for power protection equipment with high voltage and high current requirements.
5. **Electric Vehicle Charger**
With the development of the electric vehicle market, this MOSFET can also be used in the high-efficiency power conversion module in **Electric Vehicle Charger**, providing efficient and stable charging performance.
With its low on-resistance and high current capability, this MOSFET is widely used in scenarios requiring high power and high voltage processing, such as power conversion, industrial control, and electric vehicles.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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