Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
40V |
|
2.5V |
280A |
|
|
1mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
40V |
|
2.5V |
280A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
40V |
|
2.5V |
280A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description:
- **Package**: TO-220
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 40V
The maximum voltage between the drain and source that the MOSFET can withstand, suitable for medium and low voltage applications.
- **Gate-source voltage (VGS)**: ±20V
The maximum voltage between the gate and the source, ensuring that the device operates within a safe range.
- **Threshold voltage (Vth)**: 2.5V
The minimum gate voltage required to turn on the MOSFET, ensuring that it can operate reliably at lower gate voltages.
- **On-state resistance (RDS(ON))**: 1mΩ @ VGS = 10V
The resistance between the drain and the source when the MOSFET is fully turned on, providing extremely low power consumption and high efficiency.
- **Drain current (ID)**: 280A
The maximum current that the MOSFET can continuously handle, suitable for high current applications.
- **Technology**: Trench
Using Trench technology, the on-state resistance is reduced and the thermal efficiency is improved, making MOSFET perform well in high current applications.
Domain and module applications：
Application Examples:
1. **High-power Switching Power Supply**:
In high-power switching power supplies (SMPS), the extremely low on-resistance and high current handling capability of the IRFB7434PBF-VB can effectively reduce energy loss and improve power conversion efficiency, making it suitable for high-power power supply designs such as computer power supplies and industrial power supplies.
2. **Motor Drive**:
Due to its high current capability, the IRFB7434PBF-VB is ideal for motor drive applications such as electric vehicles and high-power industrial motors. It can handle high currents, ensuring efficient starting and stable operation of the motor.
3. **High-performance Power Inverter**:
In power inverters (such as solar inverters), the high current handling capability and low on-resistance of this MOSFET enable it to efficiently convert DC power to AC power, improving the overall efficiency and performance of the inverter.
4. **Battery Management System (BMS)**:
In the battery management system, the IRFB7434PBF-VB is capable of handling high currents and providing low on-resistance, which is suitable for protecting the current flow in the battery pack and ensuring the safe and stable operation of the battery in high-power applications.
The high current handling capability, low on-resistance and advanced Trench technology of the IRFB7434PBF-VB enable it to perform well in a variety of high-efficiency and high-power power conversion systems to meet the needs of demanding applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
Download now
中文
English
Back to previous page
