Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
40V |
|
3V |
409A |
|
|
1mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
40V |
|
3V |
409A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
40V |
|
3V |
409A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
### **Detailed parameter description:**
- **Model:** IRFB7430PBF-VB
- **Package:** TO220 (through-hole package)
- **Channel configuration:** Single N-channel
- **Technology:** Trench
- **VDS (drain-source voltage):** 40V
- **VGS (gate-source voltage):** ±20V
- **Vth (threshold voltage):** 3V
- **RDS(ON) (on-resistance):**
- 1.2mΩ @ VGS = 4.5V
- 1mΩ @ VGS = 10V
- **ID (maximum continuous leakage current):** 409A
- **Ptot (total power consumption):** 240W (typical value)
- **Qg (total gate charge):** 270nC
- **Rise time (tr):** 160ns
- **Fall time (tf):** 130ns
- **Operating temperature range:** -55°C to 175°C
Domain and module applications：
1. **High-Power Power Converters: **
The IRFB7430PBF-VB MOSFET’s high current handling capability (409A) and extremely low on-resistance (1mΩ @ VGS = 10V) make it ideal for **high-power power converters**. It is particularly suitable for **high-efficiency switching power supplies (SMPS)** and **DC-DC converters**, which can significantly reduce power losses and improve the overall efficiency of the system, especially in applications that need to handle high currents.
2. **Motor Control Systems: **
In **electric vehicle motor controller** or **industrial motor drive** systems, this MOSFET is capable of handling currents up to 409A, making it ideal for **H-bridge circuits**. Its extremely low on-resistance and high current capability ensure stability and reliability under high load conditions.
3. **Battery Management System (BMS): **
Due to its high current handling capability and low RDS(ON), the IRFB7430PBF-VB is suitable for **Li-ion battery management systems**, such as **Electric Vehicles (EV)** or **Energy Storage Systems**. Its low on-resistance can effectively reduce energy loss during battery charging and discharging, thereby improving system efficiency and performance.
4. **Inverter: **
In **Solar Inverter** or **Uninterruptible Power Supply (UPS)**, the IRFB7430PBF-VB can efficiently handle the DC to AC conversion task. Its low on-resistance and high current capability enable it to provide stable power conversion performance while reducing energy loss.
5. **High-power Audio Amplifier: **
In **High-power Class D audio amplifier**, this MOSFET can handle the high power and fast switching requirements, suitable for **audio amplifier circuits**. Its extremely low switching loss and high efficiency help reduce heat generation and improve the stability and sound quality of the audio system.
Overall, the IRFB7430PBF-VB MOSFET is widely used in high-power power conversion, motor control, battery management, inverters, and audio amplification due to its high current handling capability, ultra-low on-resistance, and Trench technology.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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