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IRFB4710PBF-VB Product details

Product introduction:

Product Introduction: IRFB4710PBF-VB

IRFB4710PBF-VB is a high-efficiency N-channel MOSFET with TO220 package and Trench technology, designed for high voltage and high current applications. This MOSFET can withstand a drain-source voltage (VDS) of up to 100V and a continuous drain current (ID) of 100A, while providing high current handling capability and low on-resistance (RDS(ON)). Its low RDS(ON) enables it to effectively reduce energy loss and improve system efficiency in high-power applications. The design of IRFB4710PBF-VB ensures high reliability and excellent thermal performance, and is suitable for a variety of power electronic equipment and modules.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 100V 2.5V 100A 9mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 100V 2.5V 100A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 100V 2.5V 100A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
Detailed parameter description:
1. **Package type**: TO220
2. **Configuration**: Single N-channel MOSFET
3. **Drain-source voltage (VDS)**: 100V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 2.5V
6. **On-resistance (RDS(ON))**:
- 20mΩ @ VGS = 4.5V
- 9mΩ @ VGS = 10V
7. **Continuous drain current (ID)**: 100A
8. **Working technology**: Trench technology
9. **Power dissipation (Pd)**: 150W
10. **Operating temperature range**: -55°C to 175°C
11. **Gate charge (Qg)**: 200nC (typical value)
12. **Input capacitance (Ciss)**: 4700pF (typical value)

Domain and module applications:

Application fields and module examples:

1. **Electric vehicle motor drive system**: The high current handling capability and low on-resistance of the IRFB4710PBF-VB make it very suitable for the motor drive system of electric vehicles. It can effectively control the current of the motor, reduce energy loss, and improve the overall efficiency of the power system.

2. **High-power DC-DC converter**: In DC-DC converters, the low RDS(ON) and high current capability of the IRFB4710PBF-VB are very suitable for high-power applications. This MOSFET can reduce power loss and improve conversion efficiency during the conversion process, and is widely used in power management and industrial power systems.

3. **Industrial power management**: Due to its high current and high voltage handling capabilities, the IRFB4710PBF-VB is suitable for industrial power management systems such as inverters, high-power power supplies, and UPS systems. This MOSFET can maintain stability during long-term high-load operation to ensure system reliability.

4. **Solar Inverter**: In solar inverters, the high voltage withstand capability and low on-resistance of the IRFB4710PBF-VB make it an ideal choice. It can efficiently convert the electricity generated by solar energy, ensuring the efficient operation of the inverter and the long-term reliability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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