Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
100V |
|
2.5V |
100A |
|
|
9mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
100V |
|
2.5V |
100A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
100V |
|
2.5V |
100A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description
1. **Package**: TO220
The TO220 package provides excellent heat dissipation for the MOSFET, suitable for high power applications and high current handling.
2. **Configuration**: Single N-channel
The single N-channel configuration is suitable for low-side switch applications and is easy to integrate into various power circuits.
3. **Drain-source voltage (VDS)**: 100V
The MOSFET can handle drain-source voltages up to 100V and is suitable for high voltage applications.
4. **Gate-source voltage (VGS)**: ±20V
Supports gate-source voltages up to 20V, ensuring that the MOSFET can operate stably during switching.
5. **Threshold voltage (Vth)**: 2.5V
The threshold voltage of 2.5V enables the MOSFET to be driven by logic level signals, suitable for low-level control systems.
6. **RDS(ON)**:
- **20mΩ @ VGS = 4.5V**
- **9mΩ @ VGS = 10V**
Low on-resistance at different gate-source voltages, reducing power loss and improving system efficiency.
7. **Maximum Drain Current (ID)**: 100A
Up to 100A current carrying capability makes it suitable for high power and high current applications.
8. **Technology**: Trench Technology
Trench technology optimizes switching speed and low gate charge, improving MOSFET efficiency and performance.
Domain and module applications：
Application Examples
1. **High Power Power Supply**
The IRFB4410ZGPBF-VB MOSFET is ideal for **high power DC-DC converters** and **switch mode power supplies (SMPS)**. Its high current and low RDS(ON) characteristics ensure efficient operation and reduce energy loss during high power conversion.
2. **Motor Drive**
In **motor drive** systems (such as industrial motors and electric vehicles), this MOSFET can handle high voltage and high current loads, provide reliable switching control, and improve motor performance.
3. **Inverter and Energy Management**
The IRFB4410ZGPBF-VB is suitable for **solar inverters** and **energy management systems**, especially in high voltage and high current applications. Its efficient switching characteristics and low on-resistance can effectively improve energy conversion efficiency.
4. **Power management module**
This MOSFET is also suitable for **power management modules**, such as battery management systems and power distribution networks. Its high current handling capability and low conduction loss meet the needs of high power management.
With its high current, high voltage and low on-resistance, the IRFB4410ZGPBF-VB MOSFET is widely used in **power conversion**, **motor drive**, **energy management** and **power management**, providing efficient and reliable solutions for various high power and high current applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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