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IRFB4321GPBF-VB Product details

Product introduction:

IRFB4321GPBF-VB MOSFET Product Introduction

IRFB4321GPBF-VB is a high-performance N-channel power MOSFET designed with trench technology in TO220 package. It can withstand drain-source voltage up to 150V and drain current of 100A, suitable for applications requiring high current and high voltage. Its low on-resistance (8.5mΩ@VGS=10V) ensures lower power loss and efficient energy transfer during switching. This MOSFET is suitable for various power control and power management systems, especially for applications with high current and voltage requirements.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 150V 3V 100A 8.5mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 150V 3V 100A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 150V 3V 100A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
IRFB4321GPBF-VB MOSFET Detailed parameter description

- **Package type**: TO220
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 150V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 8.5mΩ@VGS=10V
- **Maximum drain current (ID)**: 100A
- **Technology type**: Trench Technology

Domain and module applications:

Applicable fields and modules

1. **Power management system**: Due to its high voltage and high current carrying capacity, the IRFB4321GPBF-VB is very suitable for use in high-power power management systems, such as switch mode power supplies (SMPS) and DC-DC converters. Its low on-resistance helps reduce power losses and improve the overall efficiency of the system.

2. **Motor drive**: In electric vehicles (EV) and industrial motor drive systems, the IRFB4321GPBF-VB can provide reliable high current control and is suitable for the control and drive of high-power motors. Its superior current handling capability and low on-resistance can improve the performance and efficiency of motor drives.

3. **Power inverter**: In photovoltaic power generation systems or other high-power inverter applications, this MOSFET can effectively handle high voltages and high currents. Its low on-resistance reduces losses during power conversion and improves the efficiency and stability of the inverter.

4. **High Power Amplifier**: IRFB4321GPBF-VB is suitable for high power amplifier circuits, especially in applications that need to handle high voltages, such as radio frequency (RF) and audio power amplifiers. Its high current carrying capacity and low power loss characteristics ensure the reliability and efficiency of the amplifier.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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