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IRFB4310GPBF-VB Product details

Product introduction:

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IRFB4310GPBF-VB is a high-performance N-channel MOSFET designed for power applications that require high current handling and low on-resistance. It features a drain-source voltage (VDS) of **100V** and a maximum continuous drain current (ID) of **120A**, making it suitable for high-power switching applications. Using **Trench technology**, this MOSFET has an RDS(ON) of 5mΩ** at **VGS = 10V**, which can effectively reduce power losses and provide efficient performance. **The gate-source voltage (VGS) is ±20V**, providing flexibility for different control conditions, and the **threshold voltage (Vth) is 3V**, ensuring stable switching characteristics.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 100V 3V 120A 5mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 100V 3V 120A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 100V 3V 120A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N


### **Detailed parameter description:**

- **Model:** IRFB4310GPBF-VB
- **Package:** TO220 (through-hole package)
- **Channel configuration:** Single N-channel
- **Technology:** Trench
- **VDS (drain-source voltage):** 100V
- **VGS (gate-source voltage):** ±20V
- **Vth (threshold voltage):** 3V
- **RDS(ON) (on-resistance):** 5mΩ @ VGS = 10V
- **ID (maximum continuous leakage current):** 120A
- **Ptot (total power consumption):** 320W (typical value)
- **Qg (total gate charge):** 275nC
- **Rise time (tr):** 190ns
- **Fall time (tf):** 120ns
- **Operating temperature range:** -55°C to 175°C

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Domain and module applications:



1. **Power Management Modules: **
The high current handling capability (120A) and low RDS(ON) of the IRFB4310GPBF-VB MOSFET make it ideal for **power management modules**, such as **switching power supplies (SMPS)**. It can effectively reduce power loss and improve system efficiency, especially in **DC-DC converters**, which can handle high power demands and maintain efficient operation.

2. **Motor Drives: **
In **electric vehicle motor controllers** or **industrial motor drive** systems, this MOSFET is able to handle high currents and dissipate heat effectively, making it ideal for **H-bridge circuits**. Its excellent Trench technology ensures reliable performance and long-term stability under high current conditions.

3. **Battery Management Systems (BMS): **
Due to its high current capability and low resistance, the IRFB4310GPBF-VB is suitable for **lithium-ion battery management systems**, such as in **electric vehicles (EVs)** or **energy storage systems**. Its low RDS(ON) helps reduce energy loss during charging and discharging, improving the overall efficiency of the system.

4. **Inverter:**
Due to its high current handling capability and low RDS(ON), this MOSFET is suitable for **solar inverter** or **uninterruptible power supply (UPS)**. It can effectively reduce energy loss and improve power conversion efficiency in the process of converting DC to AC.

5. **High-power audio amplifier:**
In **high-power Class D audio amplifier**, this MOSFET is able to handle fast switching needs for efficient audio amplification. Its low switching loss and high efficiency help reduce heat generation, thereby maintaining the performance and reliability of the audio system.

Overall, the IRFB4310GPBF-VB MOSFET is widely used in power electronics, motor control, energy storage and high-power audio amplification due to its high current handling capability, low on-resistance and Trench technology.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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