Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
200V |
|
3V |
50A |
|
|
46mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
200V |
|
3V |
50A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
200V |
|
3V |
50A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description
1. **Package**: TO220
This MOSFET adopts TO220 package, which has good heat dissipation and current carrying capacity, suitable for high power applications.
2. **Configuration**: Single N-channel
The single N-channel configuration is suitable for low-side switching and easy to integrate into various power circuits.
3. **Drain-source voltage (VDS)**: 200V
Supports drain-source voltage up to 200V, making it suitable for high voltage applications.
4. **Gate-source voltage (VGS)**: ±20V
The MOSFET can withstand gate-source voltage up to 20V, ensuring reliable switching performance.
5. **Threshold voltage (Vth)**: 3V
The threshold voltage of 3V ensures that the MOSFET can be driven by logic level signals and exhibits good switching performance at low levels.
6. **RDS(ON)**:
- **46mΩ @ VGS = 10V**
At 10V gate-source voltage, it has an on-resistance of 46mΩ, effectively reducing conduction losses.
7. **Maximum Drain Current (ID)**: 50A
The 50A current carrying capacity makes it suitable for high current applications.
8. **Technology**: Trench Technology
Trench technology optimizes the switching speed and low gate charge of the MOSFET, improving efficiency and reliability.
Domain and module applications：
Application Examples
1. **High Voltage Power Converters**
The IRFB4233PBF-VB MOSFET is ideal for **high voltage DC-DC converters** and **switch mode power supplies (SMPS)**. Its high voltage and high current handling capabilities ensure stability and efficiency during power conversion.
2. **Motor Drive**
In **motor drive** systems, such as industrial motor control and electric vehicle applications, the IRFB4233PBF-VB is able to handle high voltage and high current loads, providing reliable switching control.
3. **Inverters and Energy Systems**
This MOSFET is suitable for **solar inverters** and **energy management systems**, especially where high voltage handling capabilities are required. It can efficiently manage and convert energy, improving the overall efficiency of the system.
4. **Power Management**
IRFB4233PBF-VB is also suitable for various **power management** modules, including battery management systems and high-power power distribution networks, and its high voltage and high current specifications can meet the requirements of these applications.
IRFB4233PBF-VB MOSFET is widely used in **power conversion**, **motor drive**, **energy management** and **power management** fields with its high voltage, high current and low on-resistance, ensuring the high efficiency and reliability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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