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IRFB4215PBF-VB Product details

Product introduction:

Product Introduction: IRFB4215PBF-VB
IRFB4215PBF-VB is a high-performance N-channel MOSFET with TO220 package and advanced Trench technology. This MOSFET is designed for high current and high voltage applications and has excellent on-resistance and thermal stability. Its maximum drain-source voltage (VDS) is 60V, the continuous drain current (ID) can reach 120A, and it has an extremely low on-resistance (RDS(ON)), which makes it perform well in high power density applications. The design of IRFB4215PBF-VB not only ensures high efficiency and reliability, but also has high thermal handling capabilities, making it suitable for a variety of demanding power electronics applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 60V 3V 120A 5mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 60V 3V 120A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 60V 3V 120A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
Detailed parameter description:
1. **Package type**: TO220
2. **Configuration**: Single N-channel MOSFET
3. **Drain-source voltage (VDS)**: 60V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 3V
6. **On-resistance (RDS(ON))**: 5mΩ @ VGS = 10V
7. **Continuous drain current (ID)**: 120A
8. **Working technology**: Trench technology
9. **Power dissipation (Pd)**: 100W
10. **Operating temperature range**: -55°C to 175°C
11. **Gate charge (Qg)**: 175nC (typical)
12. **Input capacitance (Ciss)**: 3500pF (typical value)

Domain and module applications:

Examples of applicable fields and modules:
1. **Electric vehicle drive system**: The low on-resistance and high current handling capability of the IRFB4215PBF-VB make it ideal for use in the motor drive system of electric vehicles. This MOSFET can efficiently control current, reduce energy loss, and improve the overall efficiency of the vehicle power system.

2. **High-efficiency DC-DC converter**: In DC-DC converters, the high current capability and low on-resistance of the IRFB4215PBF-VB make it an ideal choice. Especially in high-power and high-frequency applications, this MOSFET can optimize power conversion efficiency and improve system stability and performance.

3. **Industrial power supply and UPS system**: In industrial power management systems and uninterruptible power supplies (UPS), the high power handling capability and low power consumption of the IRFB4215PBF-VB can effectively improve the reliability and efficiency of the power system and ensure stable operation at critical moments.

4. **Solar Inverter**: The high current handling capability and low RDS(ON) of IRFB4215PBF-VB make it suitable for power conversion in solar inverters. It can effectively improve the conversion efficiency of the inverter and ensure the high efficiency and reliability of the solar system in long-term operation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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