Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
100V |
|
3V |
180A |
|
|
3mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
100V |
|
3V |
180A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
100V |
|
3V |
180A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description:
- **Package**: TO-220, suitable for through-hole mounting of various power modules.
- **Configuration**: Unipolar N-channel MOSFET.
- **VDS (drain-source voltage)**: 100V, capable of handling relatively high voltage applications.
- **VGS (gate-source voltage)**: ±20V, ensuring tolerance of gate voltage under different conditions.
- **Vth (threshold voltage)**: 3V, defines the voltage required to switch the MOSFET.
- **RDS(ON) (on-resistance)**: 3mΩ @ VGS=10V, providing low conduction losses and ensuring efficient operation.
- **ID (continuous leakage current)**: 180A, capable of handling significant current loads.
- **Technology**: Trench technology, which enhances low on-resistance and optimizes performance for high-efficiency applications.
---
Domain and module applications：
Application Examples:
1. **Power Systems**:
The IRFB4110QPBF-VB MOSFET is ideal for **Switching Mode Power Supplies (SMPS)**, where its low RDS(ON) value and high current handling capability help reduce power losses, thereby improving the energy efficiency of commercial and industrial power solutions.
2. **Electric Vehicle (EV) Battery Management**:
In **EV battery management systems**, this MOSFET can be used for charge/discharge control. Its high current capacity and fast switching performance help to efficiently manage the power flow between the battery and the motor drive circuit.
3. **Motor Control**:
This MOSFET is suitable for **motor control circuits**, such as motors, drones, or robots. Its ability to handle high currents and operate efficiently under harsh conditions makes it an ideal choice for motor drive modules.
4. **DC-DC Converters**:
In **high power DC-DC converters**, the IRFB4110QPBF-VB can quickly switch between on and off states, minimizing switching losses and enabling efficient voltage conversion for automotive, industrial, and communications applications.
5. **Solar Inverters**:
The MOSFET’s strong VDS rating and low on-resistance make it ideal for **solar inverter applications**, where energy efficiency is critical when converting the DC power generated by solar panels into usable AC power.
These versatile features make the IRFB4110QPBF-VB MOSFET a strong candidate for efficient high power electronics applications across multiple industries.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
Download now
中文
English
Back to previous page
