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IRFB3607GPBF-VB Product details

Product introduction:

Product Introduction: IRFB3607GPBF-VB
IRFB3607GPBF-VB is a high-performance N-channel MOSFET with TO220 package and advanced trench technology, with excellent on-resistance and current handling capabilities. This device supports up to 80V drain-source voltage (VDS) and 100A continuous drain current (ID), with very low on-resistance (RDS(ON)), making it excellent in high-power applications and suitable for use in harsh electrical environments. Its high reliability and excellent thermal performance make it widely used in various power electronics fields.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 80V 3V 100A 7mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 80V 3V 100A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 80V 3V 100A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
Detailed parameter description:
1. **Package type**: TO220
2. **Configuration**: Single N-channel MOSFET
3. **Drain-source voltage (VDS)**: 80V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 3V
6. **On-resistance (RDS(ON))**: 9mΩ @ VGS = 4.5V; 7mΩ @ VGS = 10V
7. **Continuous drain current (ID)**: 100A
8. **Working technology**: Trench technology
9. **Power dissipation (Pd)**: 175W
10. **Operating temperature range**: -55°C to 175°C
11. **Gate charge (Qg)**: 160nC (typical)
12. **Input capacitance (Ciss)**: 4300pF (typical value)

Domain and module applications:

Application fields and module examples:
1. **Electric vehicle drives and chargers**: The low on-resistance and high current carrying capacity of the IRFB3607GPBF-VB make it ideal for motor drive modules and charging systems in electric vehicles. This MOSFET can effectively reduce energy loss and improve overall system efficiency.

2. **DC-DC converters**: Due to its low power loss and high-frequency operation performance in high-current applications, this MOSFET is very suitable for use in DC-DC converters, especially in power management and server power applications, which can significantly improve system performance.

3. **Solar inverters**: In solar energy systems, inverters require efficient and high-temperature resistant MOSFETs to achieve power conversion. Due to its low RDS(ON) and high power handling capability, the IRFB3607GPBF-VB is very suitable for use in solar inverter modules, which can ensure high efficiency and long-term reliability of the system.

4. **Power Management System**: This device performs well in power transmission and distribution modules, and is especially suitable for industrial power management and uninterruptible power supply (UPS) systems, which can effectively reduce power waste and improve power transmission efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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