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IRFB33N15DPBF-VB Product details

Product introduction:

1. Product Introduction of IRFB33N15DPBF-VB

IRFB33N15DPBF-VB is a high-performance N-channel power MOSFET in TO220 package. This MOSFET has a drain-source voltage (VDS) of 150V and a gate-source voltage (VGS) of ±20V, making it suitable for use in high-voltage applications. Its threshold voltage (Vth) is 3V, which provides a lower on-resistance (RDS(ON) is 30mΩ@VGS=10V), which results in lower power consumption and higher efficiency under high current operation. IRFB33N15DPBF-VB uses advanced trench technology to ensure excellent switching performance and reliability, and is very suitable for applications requiring high current and high efficiency.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 150V 3V 50A 30mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 150V 3V 50A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 150V 3V 50A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
II. Detailed parameter description of IRFB33N15DPBF-VB

- **Package type**: TO220
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 150V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 30mΩ @ VGS=10V
- **Drain current (ID)**: 50A
- **Technology**: Trench technology
- **Maximum power consumption (Ptot)**: 200W
- **Gate charge (Qg)**: 80nC
- **Switching time**:
- Rise time (tr): 45ns
- Fall time (tf): 40ns
- **Operating temperature range**: -55°C to 175°C

Domain and module applications:

3. Application Fields and Modules

1. **Switching Power Supplies**: In switching power supply applications, IRFB33N15DPBF-VB can be used as the main switching element, and with its low on-resistance and high current capability, it helps reduce energy loss and improve power efficiency. Its high withstand voltage and low switching loss make it excellent in high-power and high-efficiency power supply designs.

2. **Motor Drives**: This MOSFET is commonly used in DC motor drive systems. With its ability to handle up to 50A of drain current, it can efficiently drive a variety of motors, provide stable power output and maintain good temperature stability.

3. **Battery Management Systems**: In battery management systems, IRFB33N15DPBF-VB is used to protect battery packs and control the charging and discharging process. Its 150V drain-source voltage can meet the needs of high-voltage battery packs, while its low on-resistance helps improve the efficiency of battery management.

4. **Solar Inverters**: In solar inverter applications, the high voltage capability and low conduction losses of this MOSFET make it ideal for use as a switching component in the inverter. It is able to provide high efficiency during the conversion process and help optimize the overall performance of the solar system.

5. **Electric Vehicle Controllers**: IRFB33N15DPBF-VB is also widely used in electric vehicle control systems. It can be used in inverters and motor drive systems to achieve efficient power conversion and precise power control, thereby improving the overall performance and reliability of electric vehicles.

Through these application examples, it can be seen that the design features of IRFB33N15DPBF-VB enable it to play an important role in high-power, high-efficiency electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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