Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
60V |
|
3V |
210A |
|
|
3mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
60V |
|
3V |
210A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
60V |
|
3V |
210A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description
- **Package**: TO220
- **Configuration**: Unipolar N-Channel
- **Maximum drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS = 4.5V
- 3mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 210A
- **Technology**: Trench
Domain and module applications：
Applications and Module Examples
1. **Power Management**: The IRFB3256PBF-VB is ideal for high-efficiency power management circuits such as DC-DC converters and switching power supplies due to its low on-resistance and high current capability. It reduces energy loss and improves the overall efficiency of the system.
2. **Motor Drive**: In motor drive systems, this MOSFET can be used for high-power motor control, such as electric vehicles and industrial motor drives. Due to its high current handling capability, it can effectively drive high-power motors and keep switching losses low.
3. **High Power Switch**: The high current handling capability of this MOSFET makes it suitable for high-power switching applications such as inverters and power switches. It can operate stably under high load conditions and provide reliable switching performance.
4. **Power Amplifier**: In power amplifier circuits, the IRFB3256PBF-VB can be used as an output stage MOSFET to amplify the signal and drive the load. Its low RDS(ON) helps reduce power loss and improve amplifier efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
Download now
中文
English
Back to previous page
