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IRFB23N20DPBF-VB Product details

Product introduction:

IRFB23N20DPBF-VB Product Introduction
IRFB23N20DPBF-VB is a high voltage N-channel power MOSFET in TO220 package. Designed for high voltage and high current applications, this MOSFET has a drain-source breakdown voltage (VDS) of 200V and a gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) is 3V, the on-resistance (RDS(ON)) is 58mΩ at VGS=10V, and the drain current (ID) is 35A. IRFB23N20DPBF-VB uses Trench technology to provide low conduction loss and efficient switching performance, suitable for a variety of power management and switching applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 200V 3V 35A 58mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 200V 3V 35A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 200V 3V 35A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
IRFB23N20DPBF-VB Parameter Description
- **Package Type**: TO220
- **Channel Configuration**: Single N-Channel
- **Drain-Source Breakdown Voltage (VDS)**: 200V
- **Gate-Source Voltage (VGS)**: ±20V
- **Threshold Voltage (Vth)**: 3V
- **On-Resistance (RDS(ON))**: 58mΩ @ VGS=10V
- **Drain Current (ID)**: 35A
- **Technology**: Trench
- **Power Dissipation**: 94W (Maximum)
- **Thermal Resistance between Junction and Ambient (RθJA)**: 62°C/W
- **Thermal Resistance between Junction and Case (RθJC)**: 1.6°C/W
- **Operating Temperature Range**: -55°C to 175°C
- **Switching time**: Turn on time is about 70ns, turn off time is about 150ns

Domain and module applications:

Applications and module examples

1. **High voltage power switch**
IRFB23N20DPBF-VB is suitable for power management applications that require high voltage switching. For example, in high voltage DC/DC converters, it can effectively control the current flow and switching, improving the efficiency and stability of the system.

2. **Industrial power**
In industrial power systems, this MOSFET can be used for switching high voltage and high current loads. Its high drain-source breakdown voltage and low on-resistance ensure the reliability and efficiency of the power system under high load conditions.

3. **Electric vehicle**
In the battery management system of electric vehicles, IRFB23N20DPBF-VB can be used for high voltage power switching and power regulation. Its high current handling capability and excellent switching performance help improve the working efficiency and safety of the battery system.

4. **Photovoltaic system**
In photovoltaic inverters, this MOSFET can handle the high voltage output from solar panels. Its high voltage and high current capabilities make it suitable for power regulation and protection in solar systems.

5. **Power Protection**
IRFB23N20DPBF-VB can also be used in power protection circuits, such as overvoltage protection and current limiting. Its high voltage withstand capability and low conduction loss enable it to effectively protect circuit components and improve system safety and stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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