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IRFB13N50APBF-VB Product details

Product introduction:


IRFB13N50APBF-VB is a high voltage N-channel power MOSFET in TO220 package. It is designed mainly for high voltage applications, with a drain-source breakdown voltage (VDS) of 650V and a gate-source voltage (VGS) of ±30V, suitable for high voltage switching and power regulation circuits. The threshold voltage (Vth) of this MOSFET is 3.5V, the on-resistance (RDS(ON)) is 500mΩ at VGS=10V, and the drain current (ID) is 9A. IRFB13N50APBF-VB adopts SJ_Multi-EPI technology, providing high voltage operation and excellent conductivity, suitable for various high voltage switching and power management applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 650V 3.5V 9A 500mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 650V 3.5V 9A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 650V 3.5V 9A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
IRFB13N50APBF-VB Parameter Description
Package Type: TO220
Channel Configuration: Single N-Channel
Drain-Source Breakdown Voltage (VDS): 650V
Gate-Source Voltage (VGS): ±30V
Threshold Voltage (Vth): 3.5V
On-Resistance (RDS(ON)): 500mΩ @ VGS=10V
Drain Current (ID): 9A
Technology: SJ_Multi-EPI
Power Dissipation: 94W (Maximum)
Thermal Resistance Junction to Ambient (RθJA): 62°C/W
Thermal Resistance Junction to Case (RθJC): 1.6°C/W
Operating Temperature Range: -55°C to 175°C
Switching Time: The turn-on time is about 100ns and the turn-off time is about 150ns.

Domain and module applications:

Applications and module examples
High voltage power switch The IRFB13N50APBF-VB is suitable for power switch applications that need to handle high voltages, such as high voltage DC/DC converters and power management systems. Its high drain-source breakdown voltage and low on-resistance enable it to efficiently switch high current loads, thereby improving system efficiency and reliability.

Inverter In solar and wind inverters, this MOSFET can be used for high voltage power switching and power regulation. Its high voltage handling capability and excellent switching performance make it an ideal choice for handling high power solar or wind energy systems.

Electric Vehicle In battery management and power systems for electric vehicles, the IRFB13N50APBF-VB can be used for high voltage load switching and voltage regulation. Its high voltage and high current capabilities ensure the reliability and stability of battery systems and motor control.

Industrial power In industrial power systems, this MOSFET is able to handle high voltage and high current applications, such as industrial drives and power management. Its high voltage breakdown capability and low conduction loss ensure high efficiency and long life of the power supply system.

Power Protection IRFB13N50APBF-VB is also suitable for switching and overvoltage protection in power protection circuits. Its high voltage tolerance enables it to effectively protect circuit components, prevent overvoltage damage, and improve system safety and stability
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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