Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Dual-N+P |
±30V |
|
1.6/-1.7V |
±8A |
|
|
18/40mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Dual-N+P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Dual-N+P |
±30V |
|
1.6/-1.7V |
±8A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Dual-N+P |
±30V |
|
1.6/-1.7V |
±8A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Dual-N+P |
|
|
|
|
|
|
|
**
- **Package**: SOP8
- **Configuration**: Dual N-channel + P-channel
- **Drain-source voltage (VDS)**: ±30V
- **Gate voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**:
- N-channel: 1.6V
- P-channel: -1.7V
- **On-resistance (RDS(ON))**:
- N-channel @ VGS = 4.5V: 24mΩ
- N-channel @ VGS = 10V: 18mΩ
- P-channel @ VGS = 4.5V: 50mΩ
- P-channel @ VGS = 10V: 40mΩ
- **Maximum drain current (ID)**: ±8A
- **Technology**: Trench
- **Operating temperature range**: -55°C to 150°C
- **Package features**: SOP8 package provides a small size, suitable for space-constrained applications.
**
Domain and module applications：
**
1. **DC-DC Converters**
The IRF9952TRPBF-VB is ideal for use in DC-DC converters due to its dual MOSFET configuration. The N-channel MOSFET can be used as a high-side switch, while the P-channel MOSFET is suitable for the low-side switch. Its efficient switching performance and low on-resistance help improve converter efficiency and stability.
2. **Power Management System**
In power management systems, this MOSFET can play a role in applications that require efficient power switching, such as power distribution and power protection modules. Its dual-channel configuration provides greater flexibility to simplify circuit design and optimize performance.
3. **Load Switch**
The IRF9952TRPBF-VB is suitable for load switching applications, such as for switching motors or other loads. In these applications, the N-channel MOSFET can be used as a high-side switch and the P-channel MOSFET can be used as a low-side switch, ensuring reliable switching operation and low power consumption.
4. **Power Management and Protection Circuits**
Due to its high current handling capability and low on-resistance, this MOSFET is suitable for use in power management and protection circuits, such as overcurrent protection and overvoltage protection modules. It can work stably under high current conditions and protect the circuit from overload and voltage spikes.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
Download now
中文
English
Back to previous page
