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IRF9510PBF-VB Product details

Product introduction:

Product Introduction - IRF9510PBF-VB
The IRF9510PBF-VB is a single P-channel enhancement-mode power MOSFET in a TO-220 package, designed for high voltage and high current applications. The device supports a maximum drain-source voltage (VDS) of -100V, suitable for load switching and power management applications that require high voltage resistance. Its threshold voltage (Vth) is -2V, ensuring that the MOSFET can switch at a lower gate-source voltage, and the on-resistance (RDS(ON)) is 178mΩ (at VGS = 4.5V) and 167mΩ (at VGS = 10V). The maximum drain current (ID) of the IRF9510PBF-VB can reach -18A, and Trench technology is used to optimize switching performance and reduce conduction losses.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-P -100V -2V -18A 167mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-P -100V -2V -18A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-P -100V -2V -18A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-P
Parameter description
- **Model**: IRF9510PBF-VB
- **Package**: TO220
- **Configuration**: Single P-channel
- **Maximum drain-source voltage (VDS)**: -100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**:
- 178mΩ @ VGS=4.5V
- 167mΩ @ VGS=10V
- **Maximum drain current (ID)**: -18A
- **Technology**: Trench

Domain and module applications:

Applications and modules
1. **High voltage switching circuit**: The high withstand voltage capability of IRF9510PBF-VB makes it very suitable for high voltage switching circuits. For example, in a high voltage DC power supply, it can be used as a high voltage switch to control the switching state of the power supply, thereby achieving efficient power management and protection.

2. **Power management system**: The low on-resistance and high current carrying capacity of this MOSFET make it an ideal choice for power management systems. Especially in inverters, UPS and battery management systems, IRF9510PBF-VB can help improve the efficiency and reliability of the system.

3. **Load switching and protection**: In load switching applications, IRF9510PBF-VB can effectively control high current loads and provide overcurrent protection. It is suitable for load switching circuits in various industrial equipment and household appliances to ensure the safety and stability of equipment operation.

4. **Motor drive**: Due to its high current handling capability, IRF9510PBF-VB is suitable for motor drive applications. Especially in situations where high current switching and control are required, such as in the drive circuits of stepper motors or DC motors, this MOSFET can provide reliable performance.

These application scenarios demonstrate the superior performance of the IRF9510PBF-VB in high voltage and high current applications, and its low on-resistance and high withstand voltage make it very valuable in modern electronic design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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