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IRF9389TRPBF-VB Product details

Product introduction:

IRF9389TRPBF-VB Product Introduction
The IRF9389TRPBF-VB is a dual N-channel and P-channel MOSFET combination device in a SOP8 package. The device has a drain-source voltage (VDS) of ±30V and a gate-source voltage (VGS) of ±20V, suitable for bidirectional current control applications. The threshold voltages of the N-channel and P-channel MOSFETs are 1.6V and -1.7V, respectively, enabling fast switching at lower gate drive voltages. The on-resistance of the N-channel MOSFET is 24mΩ at a gate voltage of 4.5V and 18mΩ at 10V; the on-resistance of the P-channel MOSFET is 50mΩ at a gate voltage of 4.5V and 40mΩ at 10V. The IRF9389TRPBF-VB uses Trench technology and is suitable for bidirectional switching and power management applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Dual-N+P ±30V 1.6/-1.7V ±8A 18/40mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Dual-N+P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Dual-N+P ±30V 1.6/-1.7V ±8A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Dual-N+P ±30V 1.6/-1.7V ±8A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Dual-N+P
IRF9389TRPBF-VB Detailed parameter description
- **Package type**: SOP8
- **Channel configuration**: Dual N+P channel
- **Drain-source voltage (VDS)**: ±30V
- **Gate-source voltage (VGS)**: ±20V
- **N-channel threshold voltage (Vth)**: 1.6V
- **P-channel threshold voltage (Vth)**: -1.7V
- **N-channel on-resistance (RDS(ON))**: 24mΩ @ VGS=4.5V
- **N-channel on-resistance (RDS(ON))**: 18mΩ @ VGS=10V
- **P-channel on-resistance (RDS(ON))**: 50mΩ @ VGS=4.5V
- **P-channel on-resistance (RDS(ON))**: 40mΩ @ VGS=10V
- **N-channel drain current (ID)**: ±8A
- **P-channel drain current (ID)**: ±8A
- **Operating temperature range**: -55°C to 150°C
- **Technology**: Trench technology

Domain and module applications:

IRF9389TRPBF-VB Applicable Fields and Application Modules

1. **Power Management**: In various power management applications, IRF9389TRPBF-VB is suitable for DC-DC converters, load switches and power distribution modules due to its dual-channel design, which can achieve efficient current switching and load management.

2. **H-bridge circuit**: In the H-bridge circuit, the dual N-channel and P-channel combination of IRF9389TRPBF-VB makes it very suitable for motor drive and control applications, enabling bidirectional current flow and motor forward and reverse control.

3. **Power Switch**: In power switching applications such as battery switching, power protection circuits and high-power load switching, IRF9389TRPBF-VB can provide efficient switching performance, reduce power consumption and improve system reliability.

4. **Audio Amplifier**: In the audio amplifier circuit, the device can effectively handle power switching, suitable for amplification and switching control of audio signals, and provide stable audio output.

5. **Logic Level Conversion**: Due to its low threshold voltage and low on-resistance, the IRF9389TRPBF-VB is suitable for logic level conversion circuits, which can effectively transfer signals between logic circuits with different voltage levels.

The dual-channel design and low on-resistance of the IRF9389TRPBF-VB make it excel in applications that require bidirectional switching, efficient power management and current control, and is an ideal choice for multi-function circuit designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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