Product introduction：
Product Introduction - IRF8915TRPBF-VB
The IRF8915TRPBF-VB is a dual N-channel MOSFET in a SOP8 package, suitable for applications requiring low on-resistance and high switching efficiency. The device supports drain-source voltage (VDS) up to 20V and has a wide threshold voltage range (0.5V to 1.5V), ensuring good performance under low voltage drive. Using advanced Trench technology, the IRF8915TRPBF-VB provides low on-resistance of 26mΩ (at VGS = 4.5V) and 19mΩ (at VGS = 10V), respectively, and supports a drain current (ID) of up to 7.1A, making it excellent in high-efficiency switching circuits and low-power applications.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Dual-N+N |
20V |
|
0.5~1.5V |
7.1A |
|
|
19mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Dual-N+N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Dual-N+N |
20V |
|
0.5~1.5V |
7.1A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Dual-N+N |
20V |
|
0.5~1.5V |
7.1A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Dual-N+N |
|
|
|
|
|
|
|
Parameter description
- **Model**: IRF8915TRPBF-VB
- **Package**: SOP8
- **Configuration**: Dual N-channel
- **Maximum drain-source voltage (VDS)**: 20V
- **Maximum gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: 0.5V to 1.5V
- **On-resistance (RDS(ON))**:
- 26mΩ @ VGS=4.5V
- 19mΩ @ VGS=10V
- **Maximum drain current (ID)**: 7.1A
- **Technology**: Trench
Domain and module applications：
Applications and modules
1. **DC-DC converter**: The low on-resistance and high switching efficiency of IRF8915TRPBF-VB make it very suitable for use in DC-DC converters. Its low RDS(ON) can reduce energy loss and improve conversion efficiency, especially in portable devices and battery-powered systems.
2. **Motor driver**: In motor drive applications, dual N-channel MOSFETs provide efficient switching control and low power consumption performance, which is very suitable for use in stepper motor and DC motor drive circuits, and can effectively improve the reliability and efficiency of motor control.
3. **Load switch**: The low on-resistance and high current carrying capacity of this MOSFET make it an ideal choice for efficient load switching, suitable for various power management and load switching applications, especially in low voltage and high switching frequency scenarios.
4. **Power management system**: In various power management systems, IRF8915TRPBF-VB can be used as a switching component to help improve the stability and efficiency of the power supply. For example, it can be used in overcurrent protection and power distribution modules on power supply boards.
These applications demonstrate the superior performance of the IRF8915TRPBF-VB in high-performance and low-power environments. Its dual N-channel design and low on-resistance make it an excellent performer in modern electronic designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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