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IRF7853TRPBF-VB Product details

Product introduction:

1. Product Introduction:

**IRF7853TRPBF-VB** is a high-performance single N-channel MOSFET in SOP8 package, designed based on advanced Trench technology. The maximum drain-source voltage (VDS) of this MOSFET is 100V, and it can work stably under higher voltage conditions. Its maximum gate-source voltage (VGS) is ±20V, which has a wide range of adaptability. The threshold voltage (Vth) is 1.8V, which allows it to be turned on at a lower gate-source voltage. The on-resistance of IRF7853TRPBF-VB is as low as 27mΩ (@VGS=4.5V) and 20mΩ (@VGS=10V), providing excellent switching efficiency and low power consumption characteristics. Its maximum drain current (ID) is 10.4A, ensuring stability and reliability in high current applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Single-N 100V 1.8V 10.4A 20mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Single-N 100V 1.8V 10.4A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Single-N 100V 1.8V 10.4A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Single-N
2. Detailed parameter description:

- **Package type**: SOP8
- **Configuration**: Single N-channel MOSFET
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- @VGS = 4.5V: 27mΩ
- @VGS = 10V: 20mΩ
- **Maximum drain current (ID)**: 10.4A
- **Technology type**: Trench
- **Power dissipation**: 2.5W
- **Operating temperature range**: -55°C to 150°C

Domain and module applications:

III. Application fields and module description:

1. **Power management system**:
IRF7853TRPBF-VB performs well in power management systems. Its high withstand voltage (100V) and low on-resistance (20mΩ @VGS=10V) enable it to effectively reduce power consumption and improve efficiency in high-voltage and high-current power conversion and regulation applications. It is suitable for various power converters, inverters and power modules to ensure efficient power management and stable power output.

2. **DC-DC converter**:
The low RDS(ON) characteristics and high current handling capability of this MOSFET make it an ideal choice for DC-DC converters. It can maintain low power consumption and improve conversion efficiency during high current conversion, and is suitable for DC-DC converter modules in computer power supplies, industrial equipment and communication systems.

3. **Load switch**:
IRF7853TRPBF-VB also performs well in load switch applications. It can be used for load switch control of power tools, household appliances and other equipment, providing reliable switching operation and reducing energy loss. Its high current capability and low on-resistance enable it to effectively control various loads, ensuring high efficiency and reliability of the system.

4. **Automotive Electronics**:
In automotive electronic systems, this MOSFET can be used for various battery management, power switching and load control applications. Its high withstand voltage and high efficiency characteristics enable it to handle high current and high voltage applications in automotive electrical systems, ensuring the stability and reliability of vehicle electronic systems.

The efficient switching performance and reliable electrical characteristics of the IRF7853TRPBF-VB enable it to provide excellent solutions in multiple fields, especially for applications requiring high withstand voltage and high current handling.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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