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IRF7831UTRPBF-VB Product details

Product introduction:

Product Introduction

IRF7831UTRPBF-VB is a high-performance N-channel power MOSFET in SOP8 package. The MOSFET has a drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of ±20V. Its threshold voltage (Vth) is 1.7V, enabling it to turn on at a lower gate voltage. The on-resistance (RDS(ON)) of IRF7831UTRPBF-VB is very low, at 4mΩ@VGS=4.5V and 3mΩ@VGS=10V, respectively, supporting a drain current (ID) of up to 25A. Using Trench technology, the IRF7831UTRPBF-VB provides excellent switching performance and high efficiency, suitable for a variety of high-performance power and power management applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Single-N 30V 1.7V 25A 3mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Single-N 30V 1.7V 25A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Single-N 30V 1.7V 25A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Single-N
Detailed parameter description

| Parameter| Value|
|---------------------|-----------------------|
| Device model| IRF7831UTRPBF-VB |
| Package| SOP8 |
| Configuration| Single N-channel|
| Drain-source voltage (VDS) | 30V |
| Gate-source voltage (VGS) | ±20V |
| Threshold voltage (Vth) | 1.7V |
| On-resistance (RDS(ON)) | 4mΩ @ VGS=4.5V |
| | 3mΩ @ VGS=10V |
| Drain current (ID) | 25A |
| Technology| Trench |

Domain and module applications:

Applications and Modules

1. **High-efficiency power management**
- The IRF7831UTRPBF-VB is ideal for high-efficiency power management systems. In such applications, its low RDS(ON) and high current handling capability can effectively reduce power consumption and improve the overall efficiency of the system. It is suitable for use as a power switch and regulator, providing stable current control, especially for devices with high power requirements.

2. **DC-DC converter**
- In DC-DC converters, the low on-resistance and high current handling capability of the IRF7831UTRPBF-VB enable it to reduce conversion losses and improve conversion efficiency. This MOSFET is suitable for applications that require high efficiency and high power handling, such as high-performance computer power supplies and power management modules for mobile devices.

3. **Load switch**
- This MOSFET is also suitable for load switch applications, where its low RDS(ON) value and high switching speed can effectively control the load and reduce power losses during switching. Suitable for applications that require high-frequency switching and high-current loads, such as power switches, automotive electronic systems, etc.

4. **Automotive Electronics**
- The high performance and compact package of the IRF7831UTRPBF-VB make it very suitable for automotive electronic systems. It can provide high efficiency in space-constrained automotive applications and is suitable for automotive power management, motor drive and switch control modules, helping to improve the reliability and efficiency of automotive electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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