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IRF7478TR-VB Product details

Product introduction:

Product Introduction

IRF7478TR-VB is a high-performance single N-channel power MOSFET packaged in SOP8. The drain-source voltage (VDS) of this MOSFET is 60V and the gate-source voltage (VGS) is ±20V, which is suitable for medium and high voltage applications. Its on-resistance (RDS(ON)) is 35mΩ@VGS=4.5V and 25mΩ@VGS=10V at different gate-source voltages, providing low on-resistance and efficient current conduction capability. The threshold voltage (Vth) is 1.7V, which allows it to be turned on at a lower gate voltage, and the maximum drain current (ID) is 7.6A. The IRF7478TR-VB uses Trench technology to achieve low-power and high-efficiency switching, making it very suitable for use in electronic applications that require high performance and high reliability.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Single-N 60V 1.7V 7.6A 25mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Single-N 60V 1.7V 7.6A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Single-N 60V 1.7V 7.6A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Single-N
Detailed parameter description

| Parameter| Value|
|---------------------|-----------------------|
| Device model| IRF7478TR-VB |
| Package| SOP8 |
| Polarity| Single N-channel|
| Drain-source voltage (VDS) | 60V |
| Gate-source voltage (VGS) | ±20V |
| Threshold voltage (Vth) | 1.7V |
| On-resistance (RDS(ON)) | 35mΩ @ VGS=4.5V |
| | 25mΩ @ VGS=10V |
| Drain current (ID) | 7.6A |
| Technology| Trench |

Domain and module applications:

Applications and Modules

1. **DC-DC Converters**
- The IRF7478TR-VB's efficient switching performance and moderate on-resistance make it ideal for use in DC-DC converters. Its higher drain-source voltage (60V) allows operation under moderately high voltage conditions, while its low RDS(ON) helps reduce power losses, thereby improving the efficiency of the entire power conversion system.

2. **Power Management**
- In power management applications such as load switches and battery management systems, the IRF7478TR-VB's high current capability (7.6A) and low on-resistance enable it to handle larger currents while improving energy efficiency. It is particularly suitable for power modules that require high efficiency and high reliability.

3. **Switching Circuits**
- Due to its efficient switching capability, the IRF7478TR-VB can be used in a variety of switching circuits, such as motor drives and load switches. Its low RDS(ON) characteristics help reduce the power consumption generated during the switching process, making it suitable for scenarios that require fast switching and high-frequency operation.

4. **Industrial and Automotive Electronics**
- In industrial control and automotive electronics applications, this MOSFET can be used in various drive and control circuits. Its high current carrying capacity and efficient switching characteristics make it suitable for applications such as automation systems, sensor interfaces, and automotive power control modules, ensuring system stability and efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

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