Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
13A |
|
|
8mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
13A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
13A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Single-N |
|
|
|
|
|
|
|
IRF7458TRPBF-VB Detailed parameters
- **Package:** SOP8
- **Configuration:** Single N-channel
- **Drain-source voltage (VDS):** 30V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** 1.7V
- **Drain current (ID):** 13A
- **RDS(ON):** 11mΩ @ VGS = 4.5V
- **RDS(ON):** 8mΩ @ VGS = 10V
- **Technology:** Trench
Domain and module applications：
Application Examples
**IRF7458TRPBF-VB** MOSFET excels in the following areas and modules:
1. **Power Switch:** Due to its low RDS(ON) value and high current handling capability, the IRF7458TRPBF-VB is suitable for use as a power switch. For example, in a power management module, it can switch current efficiently, reduce power losses, and improve system efficiency.
2. **DC-DC Converter:** This MOSFET is suitable for DC-DC converter circuits, especially where medium voltage and current are required. Its low on-resistance and high current capability help improve conversion efficiency and reduce heat.
3. **Motor Drive:** The IRF7458TRPBF-VB can be used in small motor drive circuits, especially in applications that require high-efficiency switching, such as toy motors or small appliances. Its 13A current capability makes it suitable for handling the starting and running currents of motors.
4. **Load Switch:** In various load switch applications, such as LED drivers, battery management systems, etc., this MOSFET can provide efficient switching operation. Its low RDS(ON) value can effectively reduce the power loss during switching and enhance the overall performance of the system.
Due to its high performance and reliability, this MOSFET is particularly suitable for various applications that require high-efficiency switching and medium current handling.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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