Product introduction：
IRF7456TRPBF-VB MOSFET Product Introduction:
**IRF7456TRPBF-VB** is a high-performance **single-stage N-channel MOSFET**, which adopts **SOP8** package and is designed for applications requiring high efficiency and high current handling. This MOSFET supports **30V** of **drain-source voltage (VDS)** and **gate-source voltage (VGS)** of ±20V, which is suitable for low voltage and high current scenarios. Its **threshold voltage (Vth)** is **1.7V**, ensuring that it can be turned on reliably at a lower gate drive voltage. The **RDS(ON)** of the MOSFET at **4.5V gate-source voltage** is **5mΩ**, and **4mΩ** at **10V gate-source voltage**, showing extremely low on-resistance. Its **drain current (ID)** is rated at **18A**, and it uses **Trench** technology to optimize switching performance and thermal management, which is suitable for a variety of high-efficiency circuit designs and power management applications.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
18A |
|
|
4mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
18A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Single-N |
30V |
|
1.7V |
18A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description:
- **Package: ** SOP8
- **Configuration: ** Single-stage N-channel MOSFET
- **Drain-source voltage (VDS): ** 30V
- **Gate-source voltage (VGS): ** ±20V
- **Threshold voltage (Vth): ** 1.7V
- **RDS(ON): ** 5mΩ @ VGS = 4.5V
4mΩ @ VGS = 10V
- **Drain current (ID): ** 18A
- **Technology: ** Trench
- **Switching speed: ** High, suitable for fast switching applications
- **Power consumption: ** Low, suitable for high-efficiency circuit design
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Domain and module applications：
Application Examples:
1. **High-efficiency power management:**
IRF7456TRPBF-VB is very suitable for **high-efficiency DC-DC converters** and **power management modules**. Its low RDS(ON) and high current handling capability ensure high-efficiency power conversion and is suitable for power systems that require high current and low conduction losses.
2. **Battery drive applications:**
In **battery management systems**, this MOSFET can be used for **battery switches** and **battery protection circuits**. Its high current carrying capacity and low on-resistance help improve the overall efficiency and battery life of the system and ensure stable battery management.
3. **LED lighting drive:**
IRF7456TRPBF-VB is also suitable for **LED drivers**, especially in applications that require high brightness and high power LEDs. Its low RDS(ON) ensures high-efficiency energy conversion and is suitable for long-life LED lighting systems.
4. **Load Switching:**
This MOSFET excels in **load switching** applications, including **small motor** and **relay drive**. Its high switching speed and low power consumption make it an ideal choice for high-efficiency small power and control modules.
These application examples demonstrate the IRF7456TRPBF-VB’s wide range of applicability in low voltage, high current, and high-efficiency circuits, especially in applications requiring fast switching and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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