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IRF7413ZUTRPBF-VB Product details

Product introduction:

IRF7413ZUTRPBF-VB MOSFET Product Introduction:

**IRF7413ZUTRPBF-VB** is a high-performance **single-stage N-channel MOSFET**, which adopts **SOP8** package and is suitable for applications requiring miniaturization and high efficiency. It can withstand **30V** drain-source voltage (VDS)** and **20V gate-source voltage (VGS)**. The MOSFET has a **1.7V** threshold voltage (Vth)**, ensuring reliable turn-on at low gate drive voltage. Its **RDS(ON)** at **4.5V gate-source voltage** is **11mΩ**, and at **10V gate-source voltage** is **8mΩ**, showing its extremely low on-resistance. It has **13A** leakage current (ID)** and uses **Trench** technology to optimize switching performance and thermal management, suitable for use in a variety of high-efficiency power management applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Single-N 30V 1.7V 13A 8mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Single-N 30V 1.7V 13A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Single-N 30V 1.7V 13A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Single-N
Detailed parameter description:

- **Package: ** SOP8
- **Configuration: ** Single-stage N-channel MOSFET
- **Drain-source voltage (VDS): ** 30V
- **Gate-source voltage (VGS): ** ±20V
- **Threshold voltage (Vth): ** 1.7V
- **RDS(ON): ** 11mΩ @ VGS = 4.5V
8mΩ @ VGS = 10V
- **Drain current (ID): ** 13A
- **Technology: ** Trench
- **Switching speed: ** High, suitable for fast switching applications
- **Power consumption: ** Low, suitable for high-efficiency circuit design

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Domain and module applications:

Application Examples:

1. **DC-DC Converter:**
IRF7413ZUTRPBF-VB is ideal for **DC-DC Converter**. Its low on-resistance and high switching speed make it an excellent choice for power conversion modules that require high efficiency and miniaturization, effectively reducing energy loss and heat generation.

2. **Battery Management System:**
In the **Battery Management System**, this MOSFET can be used as a **battery switch** and **protection circuit**. Its high current carrying capacity and low on-resistance can improve system efficiency and ensure reliable battery protection and control.

3. **LED Driver:**
This MOSFET is suitable for **LED drive circuits**, especially in high brightness and high power LED applications. Low RDS(ON) and fast switching performance ensure high efficiency and long life of LED drivers.

4. **Load switch:**
IRF7413ZUTRPBF-VB can also be used as a variety of **load switch** applications, such as in small motors, relay drives and other scenarios. Its high switching speed and low power consumption characteristics are suitable for high-efficiency switching in small power and control modules.

These application examples highlight the wide applicability of IRF7413ZUTRPBF-VB in low voltage, miniaturization and high efficiency fields, especially in circuit designs that require fast switching and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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