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IRF740BPBF-VB Product details

Product introduction:

IRF740BPBF-VB MOSFET Product Introduction:

**IRF740BPBF-VB** is a high voltage **single-stage N-channel MOSFET** suitable for switching applications requiring high voltage resistance and stable performance. It uses a TO-220 package and can withstand a **drain-source voltage (VDS)** of **650V** and a **gate-source voltage (VGS)** of **30V**. Its **threshold voltage (Vth)** is **3.5V**, providing lower gate drive requirements. The MOSFET has an **RDS(ON)** of **420mΩ** at a **10V gate-source voltage** and has a lower on-resistance, thereby improving switching efficiency. Its **drain current (ID)** is rated at **11A** and uses **SJ_Multi-EPI** technology, which is suitable for power switching and conversion in high voltage applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 650V 3.5V 11A 420mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 650V 3.5V 11A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 650V 3.5V 11A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
Detailed parameter description:

- **Package: ** TO-220
- **Configuration: ** Single-stage N-channel MOSFET
- **Drain-source voltage (VDS): ** 650V
- **Gate-source voltage (VGS): ** ±30V
- **Threshold voltage (Vth): ** 3.5V
- **RDS(ON): ** 420mΩ @ VGS = 10V
- **Drain current (ID): ** 11A
- **Technology: ** SJ_Multi-EPI
- **Switching speed: ** Moderate
- **Power consumption: ** High, as the TO-220 package provides good heat dissipation

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Domain and module applications:

Application Examples:

1. **Power Converters:**
IRF740BPBF-VB is suitable for **high voltage switching power supplies** and **DC-DC converters**. Its 650V drain-source voltage enables it to operate stably under high voltage conditions, making it ideal for use in power systems that require high voltage conversion and management.

2. **Motor Drivers:**
In **motor drive** applications, this MOSFET can be used to control high voltage motor loads. Its lower on-resistance helps reduce energy loss and heat generation, thereby improving drive efficiency and system stability.

3. **Lighting Ballasts:**
This MOSFET performs well in **fluorescent lamp ballasts** and **high voltage lighting controls**. The 650V voltage rating ensures that it can handle high voltage ballast circuits, while its good conduction performance and thermal management make it suitable for long-term stable operation.

4. **Inverters and Energy Systems:**
In **solar inverters** and other **energy conversion** applications, the IRF740BPBF-VB is able to handle high voltage and high power conversion needs. Its SJ_Multi-EPI technology provides excellent switching performance and reliability, suitable for high-efficiency energy systems.

These application examples demonstrate the flexibility and reliability of the IRF740BPBF-VB in high voltage and medium power applications, making it an ideal choice for applications that require high performance and voltage-tolerant MOSFETs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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