Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Dual-N+P |
±30V |
|
1.6/-1.7V |
±8A |
|
|
18/40mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Dual-N+P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Dual-N+P |
±30V |
|
1.6/-1.7V |
±8A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Dual-N+P |
±30V |
|
1.6/-1.7V |
±8A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Dual-N+P |
|
|
|
|
|
|
|
Detailed parameter description
- **Package type**: SOP8
- **Polarity configuration**: Bipolar (N-channel + P-channel)
- **Drain-source voltage (VDS)**: ±30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: N-channel 1.6V; P-channel -1.7V
- **On-resistance (RDS(ON))**:
- N-channel: 24mΩ @ VGS=4.5V; 18mΩ @ VGS=10V
- P-channel: 50mΩ @ VGS=4.5V; 40mΩ @ VGS=10V
- **Maximum drain current (ID)**: ±8A
- **Technology**: Trench
---
Domain and module applications：
Applications and module examples
1. **Power management system**: The IRF7379TR-VB is suitable for various power management modules, especially in DC-DC converters, where its dual-channel configuration can support switching operations of positive and negative voltages at the same time, ensuring efficient operation of the system.
2. **Load switch**: In load switching applications in electronic devices, this MOSFET can be used to efficiently switch high-current loads, ensuring reduced power consumption while improving overall device reliability.
3. **Battery management system**: Due to its low on-resistance and high current handling capability, the IRF7379TR-VB can be used in lithium-ion battery protection circuits to help achieve precise current control and overcurrent protection.
4. **Motor drive control**: In small motor drive modules, the bipolar configuration of this MOSFET can play a role in efficient switching and direction control, especially for devices that require fast response, such as drones or robots.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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