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IRF7379TRPBF-VB Product details

Product introduction:

1. Product Introduction:

**IRF7379TRPBF-VB** is a power MOSFET produced by International Rectifier (IR), using SOP8 package, with a built-in N-channel and P-channel bipolar configuration. It has a drain-source voltage (VDS) of ±30V and a gate-source voltage (VGS) of ±20V, and can achieve a smaller on-resistance through a lower gate drive voltage (4.5V and 10V). Its channel is manufactured using Trench technology, which can provide higher current handling capabilities and can carry a maximum current of ±8A, making it very suitable for various low-voltage switching applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Dual-N+P ±30V 1.6/-1.7V ±8A 18/40mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Dual-N+P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Dual-N+P ±30V 1.6/-1.7V ±8A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Dual-N+P ±30V 1.6/-1.7V ±8A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Dual-N+P
2. Detailed parameter description:

- **Package type**: SOP8
- **Configuration**: Dual N+P channel MOSFET
- **Drain-source voltage (VDS)**: ±30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.6V (N channel), -1.7V (P channel)
- **On-resistance (RDS(ON))**:
- @VGS = 4.5V: N channel 24mΩ, P channel 50mΩ
- @VGS = 10V: N channel 18mΩ, P channel 40mΩ
- **Maximum drain current (ID)**: ±8A
- **Technology type**: Trench
- **Operating temperature**: -55°C to 175°C

Domain and module applications:

3. Application fields and module description:

1. **DC-DC converter**:
IRF7379TRPBF-VB can be used in low voltage DC-DC converters as an efficient switching element. Its low on-resistance and bipolar design can improve efficiency and reduce power loss, making it very suitable for power management modules for devices such as laptops and tablets.

2. **Motor control circuit**:
This MOSFET has good performance in motor control applications, can handle high currents, and its dual-channel design allows bidirectional control on the same chip, suitable for small motor drives and servo control modules.

3. **Load switch**:
Due to its dual N+P channel design, this device can be used as a load switch to control different types of loads, such as positive load switch applications in battery management systems, which can achieve reliable current switching in portable electronic devices, power tools and other occasions.

4. **Battery protection circuit**:
In the battery protection module, IRF7379TRPBF-VB can realize overcharge, over-discharge and other protection functions, especially suitable for use in power management modules of mobile devices and wearable devices.

Through its compact package and excellent electrical performance, this model is suitable for low-power and efficient current control in space-constrained devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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