Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Dual-N+P |
±30V |
|
1.6/-1.7V |
±8A |
|
|
18/40mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Dual-N+P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Dual-N+P |
±30V |
|
1.6/-1.7V |
±8A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Dual-N+P |
±30V |
|
1.6/-1.7V |
±8A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Dual-N+P |
|
|
|
|
|
|
|
2. **Detailed parameter description**
- **Drain-source voltage (VDS)**: The maximum drain-source voltage is **±30V**, which is suitable for applications in medium voltage environments.
- **Gate-source voltage (VGS)**: The maximum gate-source voltage is **±20V**, which provides sufficient gate drive range.
- **Threshold voltage (Vth)**:
- **N-channel**: 1.6V, suitable for low voltage switch control.
- **P-channel**: -1.7V, to ensure that the P-channel MOSFET can conduct well under negative gate voltage.
- **Drain-Source On-Resistance (RDS(ON))**:
- **N-Channel**:
- **24mΩ** @ VGS = 4.5V
- **18mΩ** @ VGS = 10V
- **P-Channel**:
- **50mΩ** @ VGS = 4.5V
- **40mΩ** @ VGS = 10V
Low on-resistance provides efficient current conduction capability and reduces power loss.
- **Drain Current (ID)**: Maximum drain current is **±8A**, suitable for medium current load applications.
- **Technology**: Trench technology optimizes the switching performance and conduction characteristics of the MOSFET, reducing switching losses and gate charge.
Domain and module applications：
3. **Application fields and modules**
- **Power management**: IRF7379ITRPBF-VB is suitable for switching elements in **DC-DC converters** due to its low RDS(ON) and high switching efficiency, which can effectively improve power conversion efficiency and reduce energy loss.
- **Motor drive**: This MOSFET is suitable for **motor control modules**, such as motor drive systems in **power tools** and **electric vehicles**. The dual N-channel and dual P-channel configurations provide flexible current control and switching capabilities, which help improve the efficiency and stability of motor drives.
- **Switching power supply**: In **switching power supply** applications, IRF7379ITRPBF-VB can be used as an efficient switching element to handle current loads and provide stable power output.
- **Load switch**: It is suitable for various **load switch** applications, such as **load protection** and **power distribution** modules. The dual N-channel and dual P-channel configurations enable it to flexibly manage and control load current.
- **Bridge circuit**: In the **H-bridge drive circuit**, the dual N-channel and dual P-channel MOSFETs of the IRF7379ITRPBF-VB can provide bidirectional control of the motor, which is suitable for forward and reverse control of the motor.
In short, the IRF7379ITRPBF-VB is a powerful MOSFET suitable for a variety of high-current and high-efficiency switching applications. Its dual N-channel and dual P-channel configurations give it great flexibility and efficiency in power management and switching circuits.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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