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IRF7351TRPBF-VB Product details

Product introduction:

1. IRF7351TRPBF-VB Product Introduction

IRF7351TRPBF-VB is a high-efficiency dual N-channel MOSFET packaged in SOP8. This MOSFET has two N-channel channels and is suitable for high current and low voltage switching applications. Its drain-source voltage (VDS) is 60V and its gate-source voltage (VGS) is ±20V, which is suitable for efficient switching under medium voltage conditions. IRF7351TRPBF-VB adopts Trench technology and has low on-resistance and excellent switching characteristics. Its threshold voltage (Vth) is 1.7V, ensuring reliable switching operation even at lower gate drive voltages. The on-resistance (RDS(ON)) is 15mΩ at VGS of 4.5V and 12mΩ at VGS of 10V, providing low-loss current conduction capability.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Dual-N+N 60V 1.7V 10A 12mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Dual-N+N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Dual-N+N 60V 1.7V 10A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Dual-N+N 60V 1.7V 10A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Dual-N+N
2. Detailed parameter description of IRF7351TRPBF-VB

- **Package type**: SOP8
- **Configuration**: Dual N-channel MOSFET (N+N)
- **Drain-source voltage (VDS)**: 60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 15mΩ @ VGS=4.5V
- 12mΩ @ VGS=10V
- **Maximum drain current (ID)**: 10A
- **Technology**: Trench
- **Gate charge (Qg)**: Low gate charge, supporting efficient switching
- **Power consumption**: Effective heat dissipation is required to prevent overheating

Domain and module applications:

3. Application fields and module examples

1. **DC-DC converter**: IRF7351TRPBF-VB performs well in DC-DC converters, especially in applications that require efficient switching and low resistance. Its dual N-channel configuration can be used in full-bridge or half-bridge converters to optimize conversion efficiency and reduce energy loss.

2. **Power management system**: In power management systems, IRF7351TRPBF-VB can be used as a load switch. Its low on-resistance and high current handling capability make it very suitable for power switch control and load management.

3. **Motor driver**: This MOSFET is suitable for motor drivers, such as DC motor or stepper motor control systems. Its high current handling capability and low on-resistance ensure smooth operation and efficient drive of the motor.

4. **Load Switch and Switching Power Supply**: Among various load switches and switching power supply modules, the IRF7351TRPBF-VB is able to provide efficient switching functions and is suitable for power control of battery-powered devices and consumer electronics.

5. **Signal Switching and High-Frequency Applications**: Due to its low on-resistance and fast switching characteristics, the IRF7351TRPBF-VB is also suitable for signal switching applications, including audio switching and high-frequency signal processing.

In general, the IRF7351TRPBF-VB is widely used in DC-DC converters, power management, motor drives, load switches, and signal switching, with its low on-resistance, high current handling capability, and dual N-channel configuration, and is particularly suitable for system design with medium voltage and high-efficiency switching.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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