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IRF7319QTRPBF-VB Product details

Product introduction:

Product Introduction:
IRF7319QTRPBF-VB is a dual N+P channel power MOSFET in SOP8 package and manufactured based on Trench technology. The device integrates two N-channel MOSFETs and one P-channel MOSFET in one package, providing an efficient power control solution. Its drain-source voltage (VDS) is ±30V and the gate-source voltage (VGS) tolerance is ±20V, which is suitable for a variety of medium voltage and current applications. The IRF7319QTRPBF-VB has a low on-resistance at low gate drive voltage, making it an excellent performer in applications requiring efficient power control and low power consumption.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Dual-N+P ±30V 1.6/-1.7V ±8A 18/40mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Dual-N+P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Dual-N+P ±30V 1.6/-1.7V ±8A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Dual-N+P ±30V 1.6/-1.7V ±8A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Dual-N+P
Detailed parameter description:
- **Package type**: SOP8
- **Channel configuration**: Dual N+P channel
- **Drain-source voltage (VDS)**: ±30V
- **Gate-source voltage (VGS)**: ±20V
- **Throw-on voltage (Vth)**: 1.6V (N channel), -1.7V (P channel)
- **On-resistance (RDS(ON))**: 24mΩ (N channel) @ VGS=4.5V
- **On-resistance (RDS(ON))**: 18mΩ (N channel) @ VGS=10V
- **On-resistance (RDS(ON))**: 50mΩ (P channel) @ VGS=4.5V
- **On-resistance (RDS(ON))**: 40mΩ (P channel) @ VGS=10V
- **Drain Current(ID)**: ±8A
- **Technology**: Trench

Domain and module applications:

Application fields and modules:
1. **Power management and switching power supply**: The dual N+P configuration of IRF7319QTRPBF-VB makes it very useful in power management and switching power supply modules. It can effectively control positive and negative currents and is suitable for DC-DC converters, switching power supplies, and power conditioning modules to provide efficient and reliable power control.

2. **Load switch**: Due to its low on-resistance and high current capability, IRF7319QTRPBF-VB is very suitable for load switch applications. This MOSFET can provide low-power and efficient power control in load switch modules, suitable for switching operations in various consumer electronics and industrial equipment.

3. **Motor drive**: In motor drives, IRF7319QTRPBF-VB can be used as an efficient switching component, especially in motor drive systems that require positive and negative current control. Its dual MOSFET configuration enables it to flexibly control the forward and reverse rotation of the motor, providing stable driving performance.

4. **Inverter system**: In the inverter system, IRF7319QTRPBF-VB can handle a variety of current requirements and is suitable for applications such as solar inverters and uninterruptible power supplies (UPS). Its low RDS(ON) characteristics ensure efficient power conversion and management, ensuring system stability and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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