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IRF7317TR-VB Product details

Product introduction:

1. IRF7317TR-VB Product Introduction
IRF7317TR-VB is a high-performance dual N+P channel power MOSFET packaged in SOP8. Using Trench technology, this MOSFET can provide low on-resistance and excellent switching performance, suitable for a variety of high-efficiency power management and switching applications. It has a maximum drain-source voltage of ±30V and a maximum drain current of ±8A, suitable for circuits requiring bipolar switching. The low on-resistance and wide threshold voltage range of IRF7317TR-VB make it superior in battery-powered devices, power switches and load drivers.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Dual-N+P ±30V 1.6/-1.7V ±8A 18/40mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Dual-N+P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Dual-N+P ±30V 1.6/-1.7V ±8A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Dual-N+P ±30V 1.6/-1.7V ±8A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Dual-N+P
II. Detailed parameter description of IRF7317TR-VB
- **Package type**: SOP8
- **Configuration**: Dual N+P channel
- **Maximum drain-source voltage (VDS)**: ±30V
- **Maximum gate voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**:
- N channel: 1.6V
- P channel: -1.7V
- **On-resistance (RDS(ON))**:
- N channel:
- 24mΩ @ VGS=4.5V
- 18mΩ @ VGS=10V
- P channel:
- 50mΩ @ VGS=4.5V
- 40mΩ @ VGS=10V
- **Maximum drain current (ID)**: ±8A
- **Technology type**: Trench technology
- **Maximum power dissipation (Ptot)**: 1.5W
- **Operating temperature range**: -55°C to +150°C
- **Thermal resistance**: Typical 62°C/W (junction to ambient)

Domain and module applications:

III. Application fields and modules of IRF7317TR-VB

1. **Power management**: IRF7317TR-VB is widely used in low-voltage power management systems, such as DC-DC converters and switching power supplies. Its dual N+P channel configuration enables efficient power switching and current control, improving system efficiency and reducing power consumption.

2. **Load switch**: In various electronic devices, such as consumer electronics and portable devices, IRF7317TR-VB can be used as a load switch. Its low on-resistance and wide threshold voltage enable it to stably switch loads at a lower control voltage, suitable for use in mobile phones, battery-powered devices and other low-power applications.

3. **Battery management**: This MOSFET is suitable for battery management systems (BMS), such as protection circuits for lithium battery packs. Its high current capability and low on-resistance help to achieve battery charge and discharge control, improving system safety and reliability.

4. **LED Driver**: The IRF7317TR-VB is suitable for use in LED drivers and can effectively control the switching and brightness of LEDs. Its dual N+P channel structure provides a flexible driving solution and is suitable for various LED lighting and display applications.

5. **Motor Control**: In motor drive systems, the IRF7317TR-VB can handle the start and stop and speed regulation of the motor. Its high current capability and bipolar switching function make it suitable for small motor control and drive circuits, improving the stability and efficiency of the motor system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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