Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Dual-N+N |
20V |
|
0.5~1.5V |
7.1A |
|
|
19mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Dual-N+N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Dual-N+N |
20V |
|
0.5~1.5V |
7.1A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Dual-N+N |
20V |
|
0.5~1.5V |
7.1A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Dual-N+N |
|
|
|
|
|
|
|
Detailed parameter description:
- **Model**: IRF7311TR-VB
- **Package type**: SOP8
- **Configuration**: Dual N-channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 26mΩ @ VGS = 4.5V
- 19mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 7.1A
- **Maximum power dissipation (Ptot)**: 1.5W
- **Operating junction temperature range**: -55°C ~ +150°C
- **Technology**: Trench technology
Domain and module applications：
Applicable fields and application modules:
1. **Low-Voltage Power Supplies**: The low drain-source voltage (20V) and low on-resistance (19mΩ) of IRF7311TR-VB make it very suitable for use in low-voltage switching power supplies. It can effectively reduce power loss and improve power conversion efficiency, and is widely used in DC-DC converters and other low-voltage power management modules.
2. **Battery-Powered Devices**: In battery-powered devices, the high switching efficiency and low on-resistance of IRF7311TR-VB can optimize the efficiency of battery use. It is suitable for battery management systems in portable devices and consumer electronics, helping to extend battery life and improve device performance.
3. **Power Management ICs**: The dual N-channel configuration of this MOSFET performs well in power management ICs. It can be used for power switching, load switching, and high-efficiency power regulation, and is suitable for various power management solutions, including embedded systems and power regulation modules.
4. **Driver Circuits**: IRF7311TR-VB is also commonly used in driver circuits. Its low threshold voltage (0.5V ~ 1.5V) and high switching speed enable it to provide reliable performance in various drive applications, such as motor drive, relay drive, and other switch control systems.
The dual N-channel configuration, low on-resistance, and high efficiency of the IRF7311TR-VB enable it to perform well in low-voltage, high-performance applications, making it an ideal choice for a variety of power management and drive applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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