Product introduction：
IRF7309ITRPBF-VB MOSFET Product Introduction
IRF7309ITRPBF-VB is a **dual N-channel + P-channel MOSFET**, in **SOP8 package**, designed for high-efficiency switching applications. The device has a drain-source voltage (VDS) of **±30V**, suitable for medium voltage applications. The maximum gate-source voltage (VGS) of the MOSFET is **±20V**, where the threshold voltage (Vth) of the N-channel is **1.6V**, and the threshold voltage (Vth) of the P-channel is **-1.7V**. Its on-resistance (RDS(ON)) is **24mΩ** (N-channel) and **50mΩ** (P-channel) at **VGS=4.5V**, and **18mΩ** (N-channel) and **40mΩ** (P-channel) at **VGS=10V**. The maximum drain current (ID) is **±8A**. MOSFET adopts **Trench technology**, providing excellent switching performance and low on-resistance, suitable for efficient energy management and control applications.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Dual-N+P |
±30V |
|
1.6/-1.7V |
±8A |
|
|
18/40mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Dual-N+P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Dual-N+P |
±30V |
|
1.6/-1.7V |
±8A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Dual-N+P |
±30V |
|
1.6/-1.7V |
±8A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Dual-N+P |
|
|
|
|
|
|
|
Detailed parameter description:
- **Package**: SOP8
- **Configuration**: Dual N-channel + P-channel
- **Drain-source voltage (VDS)**: ±30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**:
- **N-channel: 1.6V**
- **P-channel: -1.7V**
- **On-resistance (RDS(ON)）**:
- **At VGS = 4.5V**:
- **N-channel: 24mΩ**
- **P-channel: 50mΩ**
- **At VGS = 10V**:
- **N-channel: 18mΩ**
- **P-channel: 40mΩ**
- **Drain current (ID)**: ±8A
- **Technique**: Trench
Domain and module applications：
Application examples:
1. **Power management**: IRF7309ITRPBF-VB excels in **DC-DC converters** and **switching power supplies**. Its low on-resistance and dual MOSFET structure make it suitable for efficient **power switching** and **current management**. It is particularly suitable for **consumer electronics** and **industrial power modules** applications, providing efficient power conversion and regulation.
2. **Motor drive**: In **motor drives** and **motor control systems**, the high current capability and low RDS(ON) characteristics of this MOSFET make it suitable for **motor start control** and **power management**. It can provide stable motor control and efficient power switching in **robot control systems** and **automation equipment**.
3. **Load switch**: The dual MOSFET configuration of IRF7309ITRPBF-VB makes it ideal for use as a **load switch**. In **LED lighting control** and **battery management systems**, this configuration provides flexible switch control and efficient current switching, which can optimize **lighting systems** and **battery charge and discharge** management.
4. **Signal processing**: This MOSFET is also suitable for **analog switching** and **signal path switching**. Its low on-resistance and wide voltage range make it suitable for providing stable signal switching in **audio processing** and **signal conditioning** applications, improving system performance and reliability.
IRF7309ITRPBF-VB is widely used in multiple fields and modules through its efficient switching performance and low on-resistance, providing reliable power management and control solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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