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IRF7307QTRPBF-VB Product details

Product introduction:

Product Introduction:
**IRF7307QTRPBF-VB** is a high-performance dual N+P channel MOSFET packaged in SOP8. It is designed to support a drain-source voltage of ±20V and has a drain current of up to 15A (N channel) and -8.5A (P channel). Using Trench technology, this MOSFET provides a lower on-resistance (RDS(ON)) and a lower turn-on threshold voltage (Vth), ensuring high efficiency and stability in switching operations. IRF7307QTRPBF-VB is ideal for efficient power management and miniaturized circuits.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Dual-N+P ±20V 1.0/-1.2V 15/-8.5A 10/20mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Dual-N+P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Dual-N+P ±20V 1.0/-1.2V 15/-8.5A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Dual-N+P ±20V 1.0/-1.2V 15/-8.5A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Dual-N+P
Detailed parameter description:
1. **Package type**: SOP8
2. **Configuration**: Dual N+P channel
3. **Drain-source voltage (VDS)**: ±20V
4. **Gate-source voltage (VGS)**: ±12V
5. **Turn-on threshold voltage (Vth)**: 1.0V (N channel), -1.2V (P channel)
6. **On-resistance (RDS(ON))**:
- N channel: 10mΩ @ VGS=2.5V, 6mΩ @ VGS=4.5V
- P channel: 20mΩ @ VGS=2.5V, 16mΩ @ VGS=4.5V
7. **Maximum drain current (ID)**: 15A (N channel), -8.5A (P channel)
8. **Power dissipation**: 1.3W
9. **Technology**: Trench technology
10. **Operating temperature range**: -40°C to 125°C

Domain and module applications:

Application fields and module description:
**IRF7307QTRPBF-VB** has shown a wide range of applications in the following fields and modules:

1. **Power management**: In power management circuits, the dual N+P channel configuration of the IRF7307QTRPBF-VB makes it ideal for efficient power switching and regulation. For example, it can be used in buck converters, boost converters, and other switching power modules to achieve efficient voltage conversion and current control.

2. **Motor drive**: In small motor drive applications, the low on-resistance and high current capability of this MOSFET make it a preferred choice. It can be used in DC motor drives, power tools, electric curtains, and other small motor control systems that require precise current control.

3. **Load switch**: The IRF7307QTRPBF-VB can be used as a load switch and performs well in applications that require efficient, low-power switching operations. For example, in mobile devices, portable electronics, and battery management systems, it can be used to control the switching of loads to extend battery life.

4. **Portable Electronic Devices**: Due to its small SOP8 package and high efficiency, the IRF7307QTRPBF-VB is suitable for power management in portable electronic devices. This includes power switches and management circuits in smartphones, tablets, and other small electronic devices.

5. **Small Power Modules**: In various small power modules, such as DC-DC converters and integrated power solutions, the low on-resistance and high switching efficiency of this MOSFET enable it to improve the overall performance and efficiency of the module.

In summary, the **IRF7307QTRPBF-VB** is suitable for a variety of applications such as power management, motor drive, load switching, portable electronic devices, and small power modules. With its efficient switching performance and reliable current handling capabilities, it provides an excellent solution for various electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

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