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IRF7304QTR-VB Product details

Product introduction:

Product Introduction: IRF7304QTR-VB

IRF7304QTR-VB is a dual P-channel power MOSFET packaged in SOP8, using trench technology (Trench). This MOSFET has a dual-channel configuration, each channel can withstand a drain-source voltage (VDS) of -30V and provide a continuous drain current (ID) of up to -7.3A. Its gate-source voltage (VGS) is ±20V and the threshold voltage (Vth) is -1.7V. The on-resistance (RDS(ON)) is 45mΩ at a VGS of 4.5V and drops to 35mΩ at a VGS of 10V. Designed for low-voltage switching applications, the IRF7304QTR-VB has low on-resistance and high efficiency, making it suitable for a variety of load control and power management applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Dual-P+P -30V -1.7V -7.3A 35mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Dual-P+P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Dual-P+P -30V -1.7V -7.3A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Dual-P+P -30V -1.7V -7.3A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Dual-P+P
Detailed parameter description:
- **Model**: IRF7304QTR-VB
- **Package type**: SOP8
- **Configuration**: Dual P-channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 45mΩ @ VGS = 4.5V
- 35mΩ @ VGS = 10V
- **Continuous drain current (ID)**: -7.3A
- **Maximum power dissipation (Ptot)**: 2W
- **Operating junction temperature range**: -55°C ~ +150°C
- **Technology**: Trench technology

Domain and module applications:

Applicable fields and application modules:

1. **Load Switches**: The dual P-channel configuration of IRF7304QTR-VB makes it very suitable for low-voltage load switch applications. It can effectively manage current flow in multi-channel power control systems and provide flexible switch control. It is commonly used in power management ICs and portable devices.

2. **Power Management Modules**: In power management systems, the dual P-channel design of this MOSFET can achieve efficient power switching and control. It performs well in DC-DC converters, low-voltage regulators and other power management units, which can effectively reduce power consumption and improve conversion efficiency.

3. **Battery Protection Circuits**: The high efficiency and low on-resistance of IRF7304QTR-VB make it suitable for protection circuits in battery management systems. It can provide current control and protection during battery charging and discharging to ensure system stability and safety. It is commonly used in smartphones, laptops and other portable electronic devices.

4. **Consumer Electronics**: This device is also commonly used for power control and load management in various consumer electronics products, especially those requiring low voltage, high efficiency switching, such as mobile devices, smart home devices and wearable devices. Its dual-channel design allows for flexible current distribution and control in a variety of applications.

The dual-channel P-channel configuration of the IRF7304QTR-VB enables it to perform well in low voltage load and power management applications, and is suitable for power control and protection circuits in various electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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