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IRF7301TR-VB Product details

Product introduction:

1. IRF7301TR-VB Product Introduction

IRF7301TR-VB is a dual N-channel MOSFET in SOP8 package, suitable for low-voltage switching applications. This device has two independent N-channel MOSFETs designed for efficient power conversion and switching. Its drain-source voltage (VDS) is 20V and the gate-source voltage (VGS) is ±12V, which can provide excellent switching performance at a lower gate drive voltage. The IRF7301TR-VB uses advanced Trench technology to achieve lower on-resistance (RDS(ON)) and high current handling capability. Its threshold voltage (Vth) ranges from 0.5V to 1.5V, ensuring reliable conduction under low voltage conditions.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Dual-N+N 20V 0.5~1.5V 7.1A 19mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Dual-N+N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Dual-N+N 20V 0.5~1.5V 7.1A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Dual-N+N 20V 0.5~1.5V 7.1A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Dual-N+N
2. Detailed parameter description of IRF7301TR-VB

- **Package type**: SOP8
- **Configuration**: Dual N-channel MOSFET (N+N)
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- 26mΩ @ VGS=4.5V
- 19mΩ @ VGS=10V
- **Maximum drain current (ID)**: 7.1A
- **Technology**: Trench
- **Gate charge (Qg)**: Low gate charge, supports fast switching
- **Power consumption**: Effective thermal management design is required to ensure operation within the rated range

Domain and module applications:

3. Application fields and module examples

1. **Low voltage DC-DC converter**: IRF7301TR-VB is very suitable for low voltage DC-DC converter modules. Its 20V drain-source voltage and low on-resistance make it perform well in power management systems with high conversion efficiency requirements, especially in consumer electronics and mobile devices, helping to achieve higher energy efficiency and lower power consumption.

2. **Battery Management System (BMS)**: In the battery management system, this MOSFET can provide efficient power switching and battery protection, especially for lithium battery charge and discharge control and overcurrent protection. Its dual-channel configuration can simplify the circuit design in the battery management system.

3. **Load switch and power control module**: IRF7301TR-VB is suitable for various low voltage load switch applications, such as USB interface power management, LED driver and other load switch modules. Its low on-resistance ensures efficient load control and energy conversion.

4. **Motor control system**: This MOSFET can also be used in low-power motor control systems and is suitable for switching and driving low-voltage DC motors, ensuring precise control of the motor and efficient energy transfer.

In general, IRF7301TR-VB is widely used in low-voltage power conversion, battery management, and load control due to its dual N-channel structure, low on-resistance, and efficient switching performance, and is particularly suitable for portable devices, consumer electronics, and automotive electronics systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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