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IRF646PBF-VB Product details

Product introduction:

Product Introduction
IRF646PBF-VB is a high-performance single N-channel power MOSFET in TO220 package, designed for high voltage and high current applications. It is manufactured using Trench technology, providing excellent conduction performance and low on-resistance. The maximum drain-source voltage of this MOSFET is 250V, and the drain current capability is 14A, which is suitable for various electronic devices that require high voltage and medium current handling. IRF646PBF-VB can effectively reduce energy loss and improve system efficiency, and is widely used in power management, switch control and power conversion.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 250V 3.5V 14A 190mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 250V 3.5V 14A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 250V 3.5V 14A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
Detailed parameter description
- **Model**: IRF646PBF-VB
- **Package type**: TO220
- **Channel type**: Single N-channel
- **Drain-source voltage (VDS)**: 250V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 190mΩ@VGS=10V
- **Drain current (ID)**: 14A
- **Technology**: Trench
- **Power consumption**: Maximum 94W
- **Operating temperature range**: -55°C to +175°C
- **Input capacitance (Ciss)**: 1700pF
- **Turn-off delay time (td(off))**: About 80ns
- **Td(on) delay time**: about 30ns

Domain and module applications:

Applications and modules
The high voltage and medium current characteristics of the IRF646PBF-VB enable it to excel in a variety of fields and modules, including:

1. **Switching Power Supply (SMPS)**: The IRF646PBF-VB can be used as the main switching element in a switching power supply, handling voltages up to 250V and currents up to 14A. Its low on-resistance and high efficiency make it ideal for use in power converters, adapters, and power modules, improving overall energy efficiency and reducing heat loss.

2. **Motor Drive**: Due to its high drain current capability, this MOSFET is suitable for DC motor drive circuits. It can efficiently control motors and is widely used in industrial automation, robotics, and motor control systems in home appliances.

3. **Power Amplifier**: In power amplifier applications, the high voltage handling capability and low on-resistance of the IRF646PBF-VB ensure stable output of high-power signals, making it suitable for radio frequency (RF) and audio power amplifiers.

4. **Battery Management System**: Capable of handling the charge and discharge of high-voltage battery packs, this MOSFET is ideal for battery management systems in electric vehicles (EVs) or energy storage systems, helping to ensure stable and safe operation of the battery.

5. **High Power Switch**: In high-power switching applications that require high voltage and medium current handling, such as motor starting circuits and high-power switching modules, the IRF646PBF-VB is able to provide reliable switching performance to ensure system stability and efficient operation.

These applications demonstrate the excellent performance of the IRF646PBF-VB in high voltage and high power management, making it an ideal choice for many high-power electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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