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IRF532-VB Product details

Product introduction:

IRF532-VB Product Introduction

**IRF532-VB** is a single N-channel MOSFET in TO220 package, designed for high voltage and medium current applications. It uses Trench technology, has a higher drain-source voltage (VDS) and a higher on-resistance, and is suitable for various power switches, power amplifiers and load control applications. The maximum drain voltage of IRF532-VB is 100V, and the maximum gate voltage is ±20V. It can operate stably in a high voltage environment and is suitable for use in circuits that require medium current.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 100V 1.8V 18A 127mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 100V 1.8V 18A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 100V 1.8V 18A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
Detailed parameter description

- **Package**: TO220
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 127mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 18A
- **Technology**: Trench

Domain and module applications:

Applications and Modules

**1. Power Switches**
The IRF532-VB is suitable for high voltage power switch applications. Despite its relatively high on-resistance, its high drain-source voltage (VDS) and medium current capability enable it to operate stably in high voltage environments, making it ideal for high voltage power switch control, such as power management systems and battery switches.

**2. Power Amplifiers**
In power amplifier circuits, the IRF532-VB's high voltage capability and moderate current handling capability make it a suitable choice. It can effectively handle higher voltages in amplifiers, especially for medium power amplifier applications, such as audio and RF amplifiers.

**3. High Voltage Switching Power Supplies**
This MOSFET is also suitable for use as a switching element in a high voltage switching power supply (SMPS). Its high voltage carrying capability and medium on-resistance enable it to operate stably in high voltage power conversion, making it suitable for high voltage power conversion and power management applications.

**4. Motor drive**
In motor drive applications, IRF532-VB can be used as a switching element in the motor drive circuit. Although its on-resistance is high, its high voltage carrying capacity can work stably under medium current load, which is suitable for medium power motor drive control, especially motor control systems that require high voltage.

These applications demonstrate the wide applicability of IRF532-VB in high voltage and medium current electronic systems, especially in power switches, power amplifiers, high voltage power supplies and motor drive systems. It provides reliable performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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