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IRF520PBF-VB Product details

Product introduction:

IRF520PBF-VB Product Introduction

**IRF520PBF-VB** is a single N-channel MOSFET in TO220 package, designed for medium-to-high voltage and medium-current applications. It uses Trench technology, has a high drain-source voltage (VDS) and a relatively high on-resistance, making it suitable for power switches, power amplifiers, and other electronic circuits that require medium current and high voltage. The maximum drain voltage of IRF520PBF-VB is 100V and the maximum gate voltage is ±20V, which can provide stable switching performance under high voltage conditions.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 100V 1.8V 18A 127mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 100V 1.8V 18A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 100V 1.8V 18A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
Detailed parameter description

- **Package**: TO220
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 127mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 18A
- **Technology**: Trench

Domain and module applications:

Applications and modules

**1. Power switch**
The IRF520PBF-VB is suitable for high voltage power switch applications. Its high drain-source voltage (VDS) enables it to handle higher voltage loads, and despite its relatively high on-resistance, it performs stably in medium current applications. Suitable for switch control of high voltage power supplies, such as power management systems and battery switches.

**2. Power amplifier**
In power amplifier applications, the IRF520PBF-VB is able to handle higher voltages and provide stable amplification performance. Its moderate on-resistance and high voltage carrying capability make it suitable for use in audio and RF amplifiers, capable of handling medium power amplification requirements.

**3. High voltage switching power supply**
This MOSFET is also suitable for use as a switching element in a high voltage switching power supply (SMPS). Despite its high on-resistance, its high voltage capability enables stable operation in high voltage power conversion, making it suitable for power conversion and high voltage management applications.

**4. Motor Drive**
In motor drive applications, the IRF520PBF-VB can be used as a switching element in the motor drive circuit. Although its on-resistance is relatively high, its high voltage carrying capacity enables stable operation under medium current loads, suitable for medium power motor drive control.

These applications demonstrate the applicability of the IRF520PBF-VB in high voltage and medium current electronic systems, especially providing reliable performance in power switches, power amplifiers, and high voltage power supplies.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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