Product introduction:
Product Introduction
**IRF2N60-220-VB** is a high-voltage N-channel MOSFET, packaged in TO220, manufactured using planar process technology, and designed for high-voltage applications. Its drain-source voltage is up to 650V, making it suitable for high-voltage power conversion and power switching applications. Although the on-resistance is high, the IRF2N60-220-VB still has reliable current handling capabilities and supports a maximum drain current of 2A. This MOSFET is ideal for systems that require high voltage resistance, high reliability and low power consumption, such as power management, inverters and industrial equipment.
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Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
650V |
|
3.5V |
2A |
|
|
3120mΩ |
Plannar |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
Plannar |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
650V |
|
3.5V |
2A |
|
Plannar |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
650V |
|
3.5V |
2A |
|
Plannar |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description
- **Model**: IRF2N60-220-VB
- **Package**: TO220
- **Configuration**: Unipolar N-channel
- **Drain-source voltage (V_DS)**: 650V
- **Gate-source voltage (V_GS)**: ±30V
- **Gate threshold voltage (V_th)**: 3.5V
- **On-resistance (R_DS(on))**:
- 3900mΩ @ V_GS = 4.5V
- 3120mΩ @ V_GS = 10V
- **Drain current (I_D)**: 2A
- **Technology**: Plannar
Domain and module applications:
Application fields and module examples
1. **High-voltage power management**:
- **Application scenarios**: In high-voltage power management systems, IRF2N60-220-VB can be used as the main switching element for high-voltage power conversion and regulation, such as AC-DC or DC-DC converters.
- **Description**: Its drain-source voltage capability of up to 650V enables it to operate safely and stably in power systems that need to handle high-voltage inputs, providing reliable power regulation and conversion performance.
2. **Inverter and power conversion equipment**:
- **Application scenarios**: IRF2N60-220-VB is widely used in inverter systems for power conversion, such as solar power generation equipment or industrial-grade power inverters.
- **Description**: The high-voltage capability and low on-resistance enable this MOSFET to work effectively in a high-voltage environment, making it suitable for use as a power switch to ensure efficient conversion of power in inverter systems.
3. **Industrial Control Equipment**:
- **Application Scenarios**: In industrial control equipment and large machinery power management, the IRF2N60-220-VB can be used for switch control of high-voltage power circuits, such as power management modules for factory automation systems.
- **Description**: Due to its high voltage resistance and robust current handling capabilities, this MOSFET can handle complex high-voltage power requirements in the industrial field and ensure efficient and stable operation of equipment.
4. **Home Appliances and Lighting Equipment**:
- **Application Scenarios**: In home appliances, LED lighting, and other consumer appliances, the IRF2N60-220-VB can be used in high-voltage power management circuits to improve the energy efficiency and stability of the equipment.
- **Description**: Its high-voltage characteristics make it suitable for use in electronic equipment that needs to handle mains input, ensuring that the equipment can operate safely and efficiently in a high-voltage power environment.
These application areas demonstrate the important role of IRF2N60-220-VB in environments with high voltage, high efficiency and stability requirements, and are particularly suitable for use in power management and high voltage switchgear.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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