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IRF2807PBF-VB Product details

Product introduction:

Product Introduction

**IRF2807PBF-VB** is a high-performance unipolar N-channel MOSFET in TO220 package using Trench technology. This MOSFET has high voltage resistance and low on-resistance, making it suitable for a variety of high-current, high-power applications. Its maximum drain-source voltage is 80V and its maximum drain current reaches 100A. The low on-resistance of IRF2807PBF-VB (RDS(ON) = 9mΩ @ VGS=4.5V and RDS(ON) = 7mΩ @ VGS=10V) ensures efficient current transfer and low power operation. This MOSFET is particularly suitable for use in circuits requiring high current handling and high efficiency.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 80V 3V 100A 7mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 80V 3V 100A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 80V 3V 100A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
Detailed parameter description

- **Package**: TO220
- **Configuration**: Unipolar N-channel
- **Drain-source voltage (VDS)**: 80V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 9mΩ @ VGS=4.5V
- 7mΩ @ VGS=10V
- **Maximum drain current (ID)**: 100A
- **Technology**: Trench

Domain and module applications:

Applications and Module Examples

**IRF2807PBF-VB** MOSFET has a wide range of applications in the following areas and modules:

1. **Power Management System**: In high-efficiency power converters, the low on-resistance and high current capability of the IRF2807PBF-VB make it an ideal switching element. It can be used in DC-DC converters and switching power supplies to improve energy conversion efficiency, reduce power consumption, and optimize power system performance.

2. **Electric Vehicle**: In the drive system and battery management module of electric vehicles, this MOSFET can effectively handle high currents and provide stable switching performance. Its high voltage withstand capability and low on-resistance are critical to the high power requirements of electric vehicles, helping to ensure system reliability and safety.

3. **High-power LED Driver**: In high-power LED lighting systems, the IRF2807PBF-VB can be used as a switching element in the drive circuit to provide stable current and reduce power consumption. Its low on-resistance helps reduce heat generation, thereby improving the efficiency and reliability of the overall lighting system.

4. **Industrial Motor Drive**: In industrial automation equipment, such as motor control and drive systems, the high current handling capability and stable switching characteristics of the IRF2807PBF-VB make it suitable for high-load operation, improving system performance and durability.

5. **Battery-Powered Equipment**: In battery-powered equipment that requires high current and high efficiency, this MOSFET can be used in battery protection circuits and power management modules to ensure efficient operation and safe protection of the battery.

In general, the excellent performance and high power handling capability of the IRF2807PBF-VB MOSFET enable it to perform well in a variety of high-current and high-power applications, meeting the requirements of modern equipment for efficient, reliable and stable performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

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