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IRF1404ZPBF-VB Product details

Product introduction:

IRF1404ZPBF-VB MOSFET Product Introduction

The IRF1404ZPBF-VB is a high-performance single-channel N-type MOSFET in a TO220 package designed for high current and high efficiency applications. With a drain-source voltage (VDS) of 40V and a gate-source voltage (VGS) of ±20V, this MOSFET is suitable for a variety of applications such as power management and switch control. Its gate threshold voltage (Vth) is 3V, ensuring reliable switching performance at lower gate voltages. The RDS(ON) value of the IRF1404ZPBF-VB is 2mΩ at VGS=10V, showing its extremely low on-resistance, thereby reducing power loss. At VGS=4.5V, the RDS(ON) is 15mΩ, still maintaining a low on-resistance. The MOSFET can withstand a continuous drain current of up to 180A, suitable for applications requiring high power density and high efficiency. The design using trench technology further improves its switching performance and overall energy efficiency.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 40V 3V 180A 2mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 40V 3V 180A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 40V 3V 180A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
Detailed parameter description

- **Package:** TO220
- **Configuration:** Single channel N-type
- **Drain-source voltage (VDS):** 40V
- **Gate-source voltage (VGS):** ±20V
- **Gate threshold voltage (Vth):** 3V
- **RDS(ON):** 15mΩ @ VGS=4.5V; 2mΩ @ VGS=10V
- **Drain current (ID):** 180A
- **Technology:** Trench technology

Domain and module applications:

Application Examples

Examples of applications of IRF1404ZPBF-VB MOSFET in multiple fields and modules are as follows:

1. **Power Management System:** In switch mode power supplies (SMPS) and DC-DC converters, the low on-resistance and high current handling capability of IRF1404ZPBF-VB make it very suitable for high-efficiency power switches, which can effectively reduce switching losses and improve overall system efficiency.

2. **Motor Drive:** Due to its high current handling capability, this MOSFET is suitable for motor control systems such as electric vehicles and industrial motor drives, which can provide stable performance in high-power environments and meet demanding operating requirements.

3. **Battery Management System (BMS):** In battery protection and management circuits, IRF1404ZPBF-VB can effectively control the charging and discharging process, and its extremely low RDS(ON) value reduces power losses, thereby improving the overall efficiency and reliability of the system.

4. **Inverter Applications:** In solar inverters and other high-power inverters, the high switching speed and extremely low on-resistance of this MOSFET enable efficient DC to AC conversion, providing stable and reliable power output to meet the needs of high-power loads.

5. **High-power LED Drivers:** In high-power LED lighting systems, the superior switching performance and extremely low conduction loss of the IRF1404ZPBF-VB help ensure the stability and energy efficiency of LED lighting, providing an efficient drive solution.

These application examples demonstrate the wide applicability of the IRF1404ZPBF-VB in different fields. Its high current and high efficiency performance make it an ideal choice for a variety of high-power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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