Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN6(2X2)-B |
Dual-N+N |
30V |
|
1.7V |
5.8A |
|
|
22mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN6(2X2)-B |
Dual-N+N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| DFN6(2X2)-B |
Dual-N+N |
30V |
|
1.7V |
5.8A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| DFN6(2X2)-B |
Dual-N+N |
30V |
|
1.7V |
5.8A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN6(2X2)-B |
Dual-N+N |
|
|
|
|
|
|
|
2. Detailed parameter description
- **Package type**: DFN6(2x2)-B
- **Configuration**: Dual-N+N-Channel
- **Maximum drain-source voltage (VDS)**: 30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance RDS(ON)**:
- 26mΩ @ VGS=4.5V
- 22mΩ @ VGS=10V
- **Maximum drain current (ID)**: 5.8A
- **Technology type**: Trench technology
- **Operating temperature range**: Typically -55°C to 150°C (please refer to the data sheet for details)
Domain and module applications：
3. Application fields and modules
IR6276-VB MOSFET is widely used in scenarios that require low voltage drive and low on-resistance. The following are several typical application fields and related modules:
1. **Consumer electronic devices**:
Suitable for power management modules in smartphones, tablets and portable electronic devices. Its small DFN6 package can help reduce the size of the circuit board and provide efficient current handling capabilities in a limited space.
2. **DC-DC converter**:
In low-power DC-DC converters, this MOSFET can be used to improve conversion efficiency and reduce power loss, especially suitable for battery-powered devices to extend their battery life.
3. **Motor drive control**:
IR6276-VB can also be used in low-voltage motor drive control circuits, such as small electric toys, fans and other scenarios, to ensure the smooth operation of the motor and efficient power transmission.
4. **Load Switch**:
Due to its low RDS(ON) value and dual N-channel configuration, this MOSFET is very suitable for load switch applications and can be used to control the on and off operation of larger current loads, such as chargers and power management of portable power devices.
Through its efficient Trench technology design, IR6276-VB provides excellent switching performance and power handling capabilities, making it an ideal choice for fields such as power management and signal processing.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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