Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
900V |
|
3.5V |
9A |
|
|
750mΩ |
SJ_Multi-EPI |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
SJ_Multi-EPI |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
900V |
|
3.5V |
9A |
|
SJ_Multi-EPI |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
900V |
|
3.5V |
9A |
|
SJ_Multi-EPI |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
IPP90R1K0C3-VB Detailed parameter description
- **Package type**: TO220
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 900V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 750mΩ @ VGS=10V
- **Drain current (ID)**: 9A
- **Technology type**: SJ_Multi-EPI Superjunction Multi-Epitaxial Technology
- **Other features**:
- Suitable for high voltage environments
- High current handling capability, supporting high power applications
- Excellent thermal performance, able to work stably under high current conditions
Domain and module applications:
Applications and module examples
1. **High-voltage power converter**: The IPP90R1K0C3-VB is suitable for high-voltage power converters such as AC-DC converters and high-voltage DC power modules. Its 900V drain-source voltage enables it to handle high-voltage inputs, while its low on-resistance helps improve power conversion efficiency and reduce power losses.
2. **Power inverter**: In high-voltage power inverters, this MOSFET can be used to handle high-voltage DC inputs and high-voltage outputs, suitable for applications such as solar inverters and wind inverters. Its high voltage withstand capability and stable switching performance help ensure the reliability and efficiency of the inverter.
3. **High-voltage switching circuit**: In circuits that need to handle high-voltage switching, the IPP90R1K0C3-VB provides reliable switching performance and high voltage withstand capability. It is suitable for switching operations in high-voltage switching power supplies, industrial power management, and electric vehicle charging systems.
4. **High-voltage power amplifier**: This MOSFET is also suitable for high-voltage power amplifiers, such as those used in communications and broadcasting. Its high voltage handling capability supports the amplification of high-power signals and ensures stable operation of the system under high voltage conditions.
These application scenarios demonstrate the wide applicability and excellent performance of the IPP90R1K0C3-VB in high-voltage, high-power fields, especially in environments that require high voltage tolerance and efficient switching.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours