Featured Model

Your present location > Home page > Featured Model

IPP90R1K0C3-VB Product details

Product introduction:

IPP90R1K0C3-VB Product Introduction
IPP90R1K0C3-VB is a high voltage N-channel MOSFET in TO220 package. Designed for high voltage applications, this MOSFET has a drain-source voltage (VDS) of 900V and can handle switching operations in high voltage environments. It uses SJ (super junction) multi-epitaxial technology (SJ_Multi-EPI) to provide high current handling capability and low on-resistance. The low on-resistance and high voltage tolerance of this MOSFET make it excel in high power applications.

File download

Download PDF document
Download now

VBsemi online shopping mall:

Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 900V 3.5V 9A 750mΩ SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 900V 3.5V 9A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 900V 3.5V 9A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
IPP90R1K0C3-VB Detailed parameter description
- **Package type**: TO220
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 900V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**: 750mΩ @ VGS=10V
- **Drain current (ID)**: 9A
- **Technology type**: SJ_Multi-EPI Superjunction Multi-Epitaxial Technology
- **Other features**:
- Suitable for high voltage environments
- High current handling capability, supporting high power applications
- Excellent thermal performance, able to work stably under high current conditions

Domain and module applications:

Applications and module examples
1. **High-voltage power converter**: The IPP90R1K0C3-VB is suitable for high-voltage power converters such as AC-DC converters and high-voltage DC power modules. Its 900V drain-source voltage enables it to handle high-voltage inputs, while its low on-resistance helps improve power conversion efficiency and reduce power losses.

2. **Power inverter**: In high-voltage power inverters, this MOSFET can be used to handle high-voltage DC inputs and high-voltage outputs, suitable for applications such as solar inverters and wind inverters. Its high voltage withstand capability and stable switching performance help ensure the reliability and efficiency of the inverter.

3. **High-voltage switching circuit**: In circuits that need to handle high-voltage switching, the IPP90R1K0C3-VB provides reliable switching performance and high voltage withstand capability. It is suitable for switching operations in high-voltage switching power supplies, industrial power management, and electric vehicle charging systems.

4. **High-voltage power amplifier**: This MOSFET is also suitable for high-voltage power amplifiers, such as those used in communications and broadcasting. Its high voltage handling capability supports the amplification of high-power signals and ensures stable operation of the system under high voltage conditions.

These application scenarios demonstrate the wide applicability and excellent performance of the IPP90R1K0C3-VB in high-voltage, high-power fields, especially in environments that require high voltage tolerance and efficient switching.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

Sample Req

QQ

Telephone

400-655-8788

WeChat

Shopping

Topping

Sample Req
Online
Telephone
WeChat