Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-P |
-40V |
|
-3V |
-110A |
|
|
4mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-P |
-40V |
|
-3V |
-110A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-P |
-40V |
|
-3V |
-110A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-P |
|
|
|
|
|
|
|
II. Detailed parameter description:
1. **Package type**: TO220
2. **Channel type**: Single P-channel
3. **VDS (drain-source voltage)**: -40V
4. **VGS (gate-source voltage)**: ±20V
5. **Vth (threshold voltage)**: -3V
6. **RDS(ON) (on-resistance)**: 4mΩ @ VGS = 10V
7. **RDS(ON) (on-resistance)**: 4.8mΩ @ VGS = 4.5V
8. **ID (drain current)**: -110A
9. **Technology**: Trench technology
10. **Thermal resistance**: Rth(jc) = 0.7°C/W
11. **Qg (total gate charge)**: 110 nC
12. **td(on) (turn-on delay time)**: 35 ns
13. **tr (rise time)**: 50 ns
14. **td(off) (turn-off delay time)**: 30 ns
15. **tf (fall time)**: 25 ns
16. **Operating temperature range**: -55°C to 150°C
Domain and module applications：
3. Applicable fields and module examples:
1. **Power management module**: IPP80P04P4L-06-VB is suitable for power management modules, especially as a high-current switching element. Its low on-resistance and high current capability enable it to perform well in efficient energy conversion and power regulation, reducing power consumption and heat generation.
2. **Motor drive**: In motor drive systems, this MOSFET can be used as a high-current P-channel switch. Its low on-resistance enables it to effectively handle large currents, making it suitable for use in power tools, electric vehicles, and industrial motor control systems.
3. **High power switch**: Used in high-power switching applications such as power amplifiers or high-power LED driver modules. Its low RDS(ON) and high current capability ensure high efficiency and stability of the switch, making it suitable for switch control in high-power scenarios.
4. **Load switch**: In load switch applications, IPP80P04P4L-06-VB can effectively control high current loads. Its low on-resistance provides efficient current transfer and heat management, suitable for switch control of high power loads.
5. **Battery management system**: In battery management and protection systems, especially in applications requiring high current and efficient energy management, this MOSFET provides excellent current control and low power consumption characteristics to ensure the safety and efficiency of the battery system.
6. **High voltage converter**: In high voltage converters, it can provide efficient energy conversion and high current support as a P-channel MOSFET. Its high current capability and low on-resistance ensure stable operation and high efficiency of the system.
This MOSFET can also be widely used in other applications requiring high current and efficient energy conversion, such as power converters, high power switch modules, etc.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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