Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
30V |
|
1.7V |
120A |
|
|
3mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
30V |
|
1.7V |
120A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
30V |
|
1.7V |
120A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
II. Detailed parameter description of IPP80N03S4L-04-VB
1. **Package type**: TO220
2. **Configuration**: Single-channel N-type MOSFET
3. **Drain-source voltage (VDS)**: 30V
4. **Gate-source voltage (VGS)**: ±20V
5. **Throw-on voltage (Vth)**: 1.7V
6. **On-resistance (RDS(ON))**:
- 4mΩ @ VGS = 4.5V
- 3mΩ @ VGS = 10V
7. **Maximum drain current (ID)**: 120A
8. **Technology type**: Trench technology
9. **Operating temperature range**: -55°C ~ 150°C
10. **Thermal resistance**: Typical 1.1°C/W (junction to case)
11. **Power dissipation**: Typical 100W
12. **Package size**: TO220 form factor, suitable for through-hole soldering or heat sink mounting
Domain and module applications：
III. Applications and Module Examples
1. **High-efficiency Switching Power Supply (SMPS)**: The IPP80N03S4L-04-VB is well suited for high-efficiency switching power supplies, especially those low-voltage parts that need to handle high currents. Its low on-resistance and high current capability help improve the efficiency of the power supply, reduce power consumption, and improve the overall performance of the system.
2. **Electric Vehicle (EV) Battery Management System**: In the battery management system of electric vehicles, this MOSFET is suitable for high-current battery switch control. Its low on-resistance reduces power consumption, extends battery life, and improves the overall efficiency of the system.
3. **Current Protection Circuit**: Due to its ability to handle high currents and low on-resistance, the IPP80N03S4L-04-VB is suitable for use in current protection circuits, effectively providing overcurrent protection and reducing heat loss from current flow.
4. **DC-DC converter**: In a DC-DC converter, the IPP80N03S4L-04-VB can be used as a switching element. Its extremely low on-resistance and high current handling capability help improve the efficiency of the converter, especially in low-voltage, high-current applications.
5. **Power amplifier**: In audio power amplifiers and other high-power applications, this MOSFET can provide the necessary high current and low conduction losses to ensure the stability and high efficiency of the amplifier.
In short, the IPP80N03S4L-04-VB performs well in applications such as high-efficiency switching power supplies, battery management systems, current protection circuits, DC-DC converters, and power amplifiers with its low voltage, high current capability, and low on-resistance, and is suitable for applications requiring high efficiency and low power consumption.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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