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IPP80CN10N G-VB Product details

Product introduction:

1. IPP80CN10N G-VB Product Introduction

IPP80CN10N G-VB is a high-performance single N-channel MOSFET in TO220 package. This MOSFET adopts advanced Trench technology, has a breakdown voltage of 100V and very low on-resistance, and is suitable for power management applications requiring high efficiency and high current. Its low on-resistance provides excellent current transfer performance under different gate voltages, making it perform well in various power conversion and control circuits.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 100V 1.8V 55A 36mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 100V 1.8V 55A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 100V 1.8V 55A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
2. IPP80CN10N G-VB Detailed parameter description

- **Package type**: TO220
- **Configuration**: Single N-channel
- **Breakdown voltage (VDS)**: 100V
- **Gate drive voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 36mΩ @ VGS = 10V
- 38mΩ @ VGS = 4.5V
- **Drain current (ID)**: 55A
- **Technology**: Trench
- **Operating temperature range**: -55°C to +150°C

Domain and module applications:

3. Applications and modules

1. **Switching Power Supply (SMPS)**: The IPP80CN10N G-VB is ideally suited for use as a switching element in a switching power supply due to its low on-resistance and high current capability. In this application, it provides efficient current conversion and reduces power losses.

2. **Motor Drive System**: In motor drive systems, this MOSFET is able to handle higher currents and provide reliable switching control. Its high current capability makes it suitable for industrial motors and other high-power motor applications.

3. **DC-DC Converter**: For DC-DC converters, the low on-resistance of the IPP80CN10N G-VB helps improve conversion efficiency and reduce power losses. This makes it an ideal choice for high-efficiency voltage conversion systems.

4. **Battery Management System (BMS)**: In battery management systems, the high current carrying capacity and low on-resistance of this MOSFET ensure stable charging and discharging control, improving the overall performance and safety of the system.

5. **Uninterruptible Power Supply (UPS)**: In UPS systems, the IPP80CN10N G-VB is able to handle high current and high power requirements, and its low on-resistance helps improve the efficiency and reliability of UPS systems, ensuring continuous power supply during power outages.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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