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IPP70N10SL-16-VB Product details

Product introduction:

IPP70N10SL-16-VB Product Introduction
IPP70N10SL-16-VB is a high-performance N-channel MOSFET in TO220 package. This MOSFET has a high drain-source voltage (VDS) of 100V and a high drain current (ID) of 100A, suitable for circuits requiring high current and high switching speed. It uses Trench technology, which can provide lower on-resistance and higher switching efficiency. Its low on-resistance and low gate drive voltage make it perform well in various high-power applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 100V 2.5V 100A 9mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 100V 2.5V 100A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 100V 2.5V 100A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
IPP70N10SL-16-VB Detailed parameter description
- **Package type**: TO220
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 2.5V
- **On-resistance (RDS(ON))**:
- 20mΩ @ VGS=4.5V
- 9mΩ @ VGS=10V
- **Drain current (ID)**: 100A
- **Technology type**: Trench technology
- **Other features**:
- Low gate charge, improved switching speed
- High current handling capability, suitable for high power applications
- Excellent thermal performance, support high power output

Domain and module applications:

Application areas and module examples
1. **High-power switching circuit**: IPP70N10SL-16-VB is suitable for circuits that require high-current switching, such as switch modules in power management systems. Its high current capability and low on-resistance can effectively reduce power loss and improve power conversion efficiency.

2. **DC-DC converter**: In DC-DC converters, the low on-resistance and high switching speed of this MOSFET enable it to effectively manage current during high-power conversion, reduce conversion losses, and improve overall system efficiency.

3. **Electric vehicle drive system**: This MOSFET can be used in the drive system of electric vehicles. With its high current handling capability and low on-resistance, it ensures that electric vehicles can operate stably during acceleration and heavy loads, and improves the reliability and performance of the power system.

4. **Power amplifier and audio amplifier**: In power amplifier and audio amplifier applications, the high current handling capability and fast switching characteristics of the IPP70N10SL-16-VB help improve the quality and efficiency of signal transmission, reduce signal distortion and power loss.

These applications demonstrate the wide applicability of the IPP70N10SL-16-VB in the fields of high power, low on-resistance and high switching efficiency, and can provide stable performance in a variety of demanding power management applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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